国家/地区 美国（11） 韩国（9） 中国（8） 世界知识产权组织（8） 日本（7） 欧洲专利局（EPO）（4） 台湾（4）
IPC部 C（18）
IPC大类 C01（18） H01（18） C23（9）
C09（2） C30（2）
IPC小类 C01B（18）
IPC H01L021/02（18）
发明人 LIU Z（2）
公开年 2021（18）
申请年 2021（9）  2020（6）  2019（3） 
专利权人 SAMSUNG ELEC.（2） TOKYO ELECTR.（2） UNIV SINGAPO.（2）

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Preparation of ordered chiral molecular chain on substrate used as device substrate, involves heating single crystal substrate, forming double-layer graphene on substrate, placing substrate in chamber, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecule and depositing molecules.

PI X, WANG H, LU H

Graphene device for use in e.g. information technology, has insulator layer, metal layer, graphene layer, optional passivation layer, and optional metal adhesive layer that are arranged together.

LINDAMOOD L, BUSCH J

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Composite material useful for electronic device, preferably galvanic cell, supercapacitor, or fuel cell, comprises polyamide-imide, and nanoplatelets.

HODGE S A, GALHENA D T L, GALHENA D T L G

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Growing nitride comprises preparing substrate, manufacturing graphene buffer layer on substrate, patterning graphene buffer layer to obtain patterned graphene buffer layer, and growing nitride on patterned graphene buffer layer.

LIU Z, FENG T, LIANG M, YI X, WANG J, LI J

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A