国家/地区 欧洲专利局（EPO）（22）
IPC部 C（22）
IPC大类 C01（22）
IPC小类 C01B（22）
IPC H01L021/02（22）
发明人 LEE E（3） CHOE P（2） CHOI B（2）
CHOI B L（2） HWANG T（2） LEE E K（2）
WHANG D（2） WHANG D M（2） ZENASNI A（2）
公开年 2013（4） 2012（3） 2021（3） 2010（2） 2015（2） 2017（2） 2018（2） 2020（2）
申请年 2013（3）  2015（3）  2019（3）  2009（2）  2011（2）  2012（2）  2016（2）  2017（2） 
专利权人 SAMSUNG ELEC.（3） COMMISSARIAT.（2） UNIV SUNGKYU.（2）

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Depositing layer of carbon nanostructures on substrate by providing substrate in processing chamber, providing processing gas in processing chamber having carbon monoxide gas and creating and sustaining gaseous plasma in processing chamber.

ZAPLOTNIK R, MOZETIC M, PRIMC G, VESEL A, HORI M, ODA O

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Production method for producing graphene on copper substrate, involves continuously monitoring temperature of copper sheets and heating copper sheets to specified temperature for predetermined time using electromagnetic induction heater.

HABERLE TAPIA P, ORELLANA GOMEZ C, HABERLE T P, ORELLANA G C, HAEBERLE TAPIA P, HAEBERLE T P

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for manufacturing conductive material in lubricant, involves attaching substrate layer to graphene layer, and providing second conductive material with substrate layer which is attached to graphene layer.

TREOSSI E, SCIDA A, PALERMO V, KHAN M A, SCIDAE A