国家/地区 美国（7） 中国（6） 世界知识产权组织（6） 日本（5） 欧洲专利局（EPO）（4） 韩国（4） 印度（2） 墨西哥（2） 俄罗斯（2） 台湾（2）
IPC部 C（10）
IPC大类 C30（10） C01（7） H01（6）
B32（5） B82（4） B05（3）
C23（3）
IPC小类 C30B（10）
IPC C30B029/02（8） C01B031/04（6） C01B031/02（5）
B82Y040/00（4） B32B009/04（3） B82Y030/00（3）
C30B023/02（3） B05D005/12（2） B82B003/00（2）
C01B032/188（2） C23C016/26（2） C23C016/56（2）
C30B025/18（2） C30B029/36（2） C30B033/00（2）
发明人 VEERASAMY V（2） VEERASAMY V S（2）
公开年 2011（5） 2009（3） 2010（2）
申请年 2009（10）
专利权人 CHINESE ACAD.（2） GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2）

Preparing graphene on diamond surface, comprises e.g. placing substrate on substrate support in cavity of a filament chemical vapor deposition system and growing a diamond intermediate layer, growing boron doped diamond film and annealing.

LI J, GU C, LU C

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Structure, useful for fabricating electrical devices, comprises layer of graphene supported on a substrate, which is pre-selected to have a specified coefficient of thermal expansion, for inducing controlled stress in graphene layer.

QUITORIANO N J, KAMINS T I, BRATKOVSKI A M

Method for epitaxially growing carbon semiconductor nanometer film material graphene on silicon carbide (SiC) substrate, involves annealing and removing default surface formed in growing process of graphene.

WANG W, CHEN X, YANG R, HUANG Q

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W

Epitaxial growth of graphene on silicon surface of silicon carbide by hydrogen etching silicon surface to eliminate surface scratch and form regular step-like strips, removing oxide from surface, and heating surface in presence of argon gas.

GUO H, TANG X, WANG D, WANG Y, ZHANG Y

Making intercalation electrode for electrochemical cell, involves forming graphene planes perpendicular to a current collector substrate and coextensive with electrode surface region by chemical vapor deposition using carbon gas composition.

LEV L C, SACHDEV A K, VERBRUGGE M W, XIAO X, XIAO Y, SHAW X

Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.

SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M