国家/地区 韩国（5） 中国（4） 美国（4） 日本（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 C（12）
IPC大类 C30（12） H01（6） C01（5）
B82（3） C23（2）
IPC小类 C30B（12）
IPC C30B029/02（7） C01B031/02（5） C30B029/38（3）
B82Y040/00（2） C30B023/02（2） C30B025/02（2）
H01L021/20（2） H01L021/205（2）
发明人 BARKER D L（2） CHEN X（2） HWANG S W（2）
OWENS W R（2） SEONG H K（2） SONE C S（2）
公开年 2012（6） 2011（5）
申请年 2010（12）
专利权人 RAYTHEON CO（2） SAMSUNG LED .（2）

Graphene diamond laminated body for e.g. biosensor comprises graphene which is laminated on the diamond substrate or has nano ribbon film of graphene on diamond substrate.

TOKUDA N, INOKUMA T, FUKUI M, YAMAZAKI S, TAKEUCHI D, MAKINO T, IGUMA T

Manufacture of single crystal involves forming graphene layer on portion(s) of amorphous or polycrystalline sample, floating in air within treatment basin, heating and crystallizing.

JOO I L, CHAN Y H, JUNG H K, YONG S Y, YONG H S, KWANG M K

Substrate manufacture method for nitride single crystal growth, involves forming graphene layer on substrate and forming silicon carbide layer on graphene layer.

SEONG H K, HWANG S W, SONE C S

Manufacturing method of nitride single crystal, involves processing chemically the substrate using etchant to remove graphene layer.

SEONG H K, SUNG Y J, CHUNG H J, HWANG S W, SONE C S

Growing graphene on silicon carbide substrate epitaxially involves adopting formation technology imaging substrate, on surface of substrate, forming graphic array, performing thermal decomposition to patterned substrate and forming graphene.

CHEN X, GUO L, JIA Y, LI K, LIN J, WANG G, WANG W

Forming in-situ engineered defects in graphene, comprises manipulating surface of single crystal region having hexagonal crystal lattice on a substrate to create non-planar features and epitaxially forming layer of carbon atoms on surface.

BARKER D L, ZELINSKI B J, OWENS W R

Manufacture of graphene film for photoelectron engineering device, involves preparing monocrystal substrate, providing monocrystalline catalyst layer, processing, heating gaseous carbon source and cooling.

FUJITA D, XU M S, JO A

Growing graphene on big-diameter silicon carbide carbon surface involves polishing and cleaning silicon carbide wafer carbon surface, putting the wafer in graphite tray, pumping the degree of vacuum, and pouring high-purity argon.

HU X, XU X, CHEN X, WEI R

Graphene substrate used in graphene electronic device, has base substrate which is insulating monocrystal substrate provided with monoatomic step structure on surface.

OGINO TOSHIO, TSUKAMOTO TAKAHIRO, KOYAMA KOUJI, SUNAGAWA KAZUHIKO

Making isotopically enriched graphene, comprises e.g. accelerating ion beam with an electric field towards substrate; and using magnetic or electric field generating devices to separate the ion beam into many component ion beams.

BARKER D L, OWENS W R, BECK J W