国家/地区 中国（33）
IPC部 C（33）
IPC大类 H01（33） C09（10） C23（10）
C30（8） C01（7） C08（6）
B82（2） C22（2） H10（2）
IPC小类 H01L（33）
IPC C30B025/18（6） C30B029/40（6） H01L021/02（5）
H01L031/048（5） H01L031/18（5） C01B032/186（4）
C08J005/18（4） C23C016/26（4） H01L031/049（3）
C08K003/04（2） C08K003/36（2） C08K003/38（2）
C08K009/06（2） C09D005/33（2） C09D007/61（2）
发明人 LI X（3） WANG X（3） CHEN Z（2）
TANG X（2） XIA C（2） YANG H（2）
YE Y（2） ZHANG G（2） ZHANG W（2）
ZHOU L（2）
公开年 2023（33）
申请年 2022（23）  2023（7）  2021（3） 
专利权人 TCL TECHNOLO.（2）

Branched nano-wire array composite photoelectric film used for photo cathode protection, has composite heterojunction system cadmium sulfide/reduced graphene oxide quantum dots/titanium dioxide branched nanowire array composite photoelectric film.

HOU B, LU G, SUN M, JIANG X

Processing of photoelectric device e.g. quantum dot LED, involves providing film layer of photoelectric device, and processing surface of film layer with liquid carbon dioxide and/or solid carbon dioxide.

AO Z, ZHANG J, YAN Y, HONG J, YANG F, MO X

Preparing copper-clad aluminum composite welding strip used in interconnection strip, bus belt comprises surface cleaning of copper strip and aluminum rod, wrapping, multiple drawing of composite copper rod, and ultrasonic testing, drawing composite copper wire, heat annealing and tin plating.

DONG W, ZHANG W, GAO L, CHEN Q

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Reducing damage to substrate when using plasma-enhanced atomic layer deposition to grow thin film involves depositing oxide film on cleaned substrate using water/ozone source and metal source, and depositing nitride film using plasma source.

HU Y, ZHU X, TIAN F, YANG J, LIU H, QIU P, WEI H, ZHENG X, QIU H

Heat dissipation sheet useful for display component comprises heat dissipation layer formed of polymer sheet containing graphene particles, and first adhesive layer located on top of heat dissipation layer.

YOO T H, LEE J, JOH B J, PARK M W, PARK M, CHO B, LIU T

Chromium metal etching solution useful for integrated circuit comprises ceric ammonium nitrate, hydrogen peroxide, oxalic acid, dodecyldimethylbenzylammonium chloride, auxiliary agent and deionized water (remaining amount).

TANG X, HE K, GE Y

Photo-induced pure spin flow Sawtooth graphene device has triangulation provided with left electrode, right electrode and middle area, where middle area is provided with head-to-head triangle alkene, and photoelectric nano device is to take middle area as axis.

HUANG X, DONG Y

Preparing two-dimensional materials with zero bandgap involves transferring zero-bandgap two-dimensional material to surface of substrate to obtain sample, adding the sample and fluorine-containing polymer into heating container, and made to undergo fluorination.

GAO J, XUE Y, JIANG Y

Crucible used for growing two-dimensional semiconductor material, comprises crucible cover comprising cover plate and cover side wall, and crucible base comprising bottom plate and bottom side wall.

ZHANG L