国家/地区 韩国（68）
IPC部 C（68）
IPC大类 C23（68）
IPC小类 C23C（68） C01B（49） H01L（30）
B01J（16） B82Y（15） B32B（11）
C30B（11） B05D（5） H01B（5）
H01J（4） C25D（3） H01G（3）
H01M（3） C01G（2） C08K（2）
IPC C23C016/02（68）
发明人 SHIN H（10） SHIN H J（10） BYUN K（7）
BYUN K E（7） LEE C（7） LEE C S（7）
LEE E（7） MATSUMOTO T（7） SHIN K（6）
SHIN K W（6） YOON S G（5） IFUKU R（4）
SHEN X（4） CHO K W（3） CHO Y（3）
公开年 2021（16） 2018（6） 2020（6） 2013（5） 2014（5） 2017（5） 2023（5） 2011（4） 2015（4） 2022（4） 2016（3） 2009（2）
申请年 2020（15）  2016（7）  2021（7）  2013（6）  2014（5）  2017（5）  2019（4）  2022（4）  2011（3）  2018（3）  2008（2）  2010（2）  2012（2）  2015（2） 
专利权人 SAMSUNG ELEC.（15） TOKYO ELECTR.（7） UNIV SUNGKYU.（5） UNIV IND AC.（4）
CENT ADVANCE.（3） KOREA INST S.（3） KUK IL GRAPH.（3） POSTECH ACAD.（3）
UNIV SUNGKYU.（3） HONG B H（2） KOREA ADVANC.（2） LAM RES CORP（2）
SRC CORP（2） UNIV CALIFOR.（2） UNIV SUNGKYU.（2）

Flexible graphene thin film used for transparent electrode devices, comprises flexible substrate, titanium buffer layer grown on one side of flexible substrate by sputtering and graphene thin film layer grown in-situ in same equipment.

YOON S G, IREH H

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Substrate processing apparatus for manufacturing semiconductor device, comprises substrate support to support multiple substrates such that substrates are on substrate support, chamber sidewall surrounding side surface of substrate support, and upper plate having plate portions on substrate support.

OH S, AN S, LEE J, JEONG G, JUNG K O, LEE J H, AHN S J, OH S R

Layer structure for use in integrated circuit device, comprises lower layer, ion implantation layer in lower layer, and carbon-based material layer on ion implantation layer, and ion implantation layer includes carbon, and further has high electrical performance with ultra small structure.

YOO M, BYUN K, KIM S, LEE C, LEE C S, BYUN K E, YOO M S

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Twin-chamber roll-to-roll graphene film manufacturing device useful for transparent display and flexible display having upper chamber with supply roller for supply catalytic metal film and winding roller for winding catalytic metal film.

KI K Y

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Growing two-dimensional transition metal chalcogenide film for manufacturing e.g. diode, involves placing patterned metal layer on substrate surface, supplying chalcogen precursor and transition metal precursor to chamber, and evacuating.

LEE E, AHN W, KIM H, LEE H, LEE H S, KIM H S, AHN W S, HA L