国家/地区 台湾（17）
IPC部 C（17）
IPC大类 C23（17）
IPC小类 C23C（17） C01B（13） H01L（10）
B32B（3） B82Y（3） C30B（3）
H01J（3） B82B（2） C09K（2）
H01B（2）
IPC C23C016/455（17）
发明人 CHANG C（2） CHIU P（2） DIXON S（2）
GUINEY I（2） HUANG K（2） JOUVRAY A（2）
QIU B（2） TEO K B K（2） THOMAS S（2）
WANG J（2）
公开年 2016（5） 2022（4） 2021（3） 2017（2）
申请年 2014（3）  2015（3）  2016（3）  2021（3）  2020（2）  2022（2） 
专利权人 AIXTRON SE（2） APPLIED MATE.（2） IND TECHNOLO.（2） PARAGRAF LTD（2）

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Producing electronic component e.g., resistive memory element by providing substrate which is disposed in deposition chamber, and forming anchoring layer on surface by exposing the substrate to reactants in atomic layer deposition process.

KIRSCH P, RESCH S, SEIM H, WOODRUFF J, NANAYAKKARA C, RAISSI S

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Protective layer for use in display screen, has layer main body provided with sapphire substrate, where graphene film is coated on sapphire substrate.

XIAO D

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Method of growing graphene for use in e.g. biomedical applications, involves introducing reaction gas containing oxygen-containing carbon source into furnace, heating, UV-irradiating reaction gas and depositing graphene film on substrate.

CHIU J, YEH C, CHIU P, QIU B, QIU R, YE Z