国家/地区 美国（14） 世界知识产权组织（11） 欧洲专利局（EPO）（10） 中国（8） 日本（7） 韩国（7） 加拿大（5） 台湾（3） 印度（2） 俄罗斯（2）
IPC部 B（14）
IPC大类 B32（14）
IPC小类 B32B（14）
IPC B82Y040/00（14）
发明人 AKSAY I（3） AKSAY I A（3） LIU J（2）
WANG D（2）
公开年 2010（8） 2009（3） 2011（3）
申请年 2009（14）
专利权人 AKSAY I A（3） UNIV PRINCET.（3） BATTELLE MEM.（2） LIU J（2）
UNIV PRINCET.（2） WANG D（2）

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Composite material, useful for producing graphene layers material, comprises a layered double hydroxide or a layered silicate and a polyacrylonitrile, which is at least partially decomposed to graphene layers.

WOLF A, LOLLI G, MLECZKO L, SCHLUETER O F, SCHLUETER O F K, SCHLUTER O F

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Electronic device comprises porous graphene layer including graphene nanoribbon and electrically connecting two graphene electrodes.

KAERKKAEINEN A M, HAQUE S M, COLLI A, PASANEN P M, JOHANNES K L M, UUSITALO M A, LEHTINIEMI R K, KARKKAAINEN A M, HAQUE S, KARKKAINEN L M J, KARKKAINEN L, UUSITALO M, LEHTINIEMI R, KARKKAINEN L M Y, KAERKKAEINEN L M J

Graphene structure for electronic device elements, contains graphene fixed to substrate in which bonding is formed between portion to which hydrophilic process is performed, or portion to which hydrophilic process is not performed.

SANDHU A

Removing a carbonization catalyst from graphene sheet, involves contacting the carbonization catalyst with a salt solution, which is capable of oxidizing the carbonization catalyst.

CHOI J, HONG B H, KIM K S

Nanocomposite material for energy storage device, i.e. double layer ultracapacitor, battery or supercapacitor includes mesoporous metal oxide bonded to graphene layer.

AKSAY I A, JUN L, KOU R, WANG D, LIU J, AKSAY I

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W

Nanocomposite material useful in energy storage device such as electrochemical device and lithium ion battery, comprises metal oxide bonded to graphene layer.

AKSAY I A, CHOI D, LIU J, WANG D, YANG Z, AKSAY I, GRAFF G L, NIE Z, VISWANATHAN V V, ZHANG J, XU W, KIM J Y

Graphene material in the form of sheet, ribbon or polyphenylene molecule, films, optical and electronic devices is pristine in the interior of the plane and functionalized at its edges.

DAI H, LI X, SUN X