国家/地区 日本（47） 美国（45） 韩国（22） 世界知识产权组织（19） 中国（12） 欧洲专利局（EPO）（8） 台湾（8） 德国（6） 新加坡（2）
IPC部 C（68）
IPC大类 C01（68）
IPC小类 C01B（68）
IPC H01L021/28（68）
发明人 SAKAI T（7） YAMAZAKI Y（6） MIYAZAKI H（5）
KATAGIRI M（4） MATSUMOTO T（4） WADA M（4）
BUSCH J（3） IFUKU R（3） KONDO T（3）
LINDAMOOD L（3） AHN J（2） AHN J H（2）
HIROOKA M（2） HIURA H（2） JIPPO H（2）
公开年 2013（10） 2015（10） 2014（8） 2017（7） 2012（6） 2016（6） 2010（5） 2011（5） 2018（5） 2020（2） 2021（2）
申请年 2015（10）  2014（9）  2011（8）  2013（8）  2016（7）  2012（6）  2010（5）  2009（3）  2017（3）  2008（2）  2019（2）  2020（2） 
专利权人 TOSHIBA KK（9） FUJITSU LTD（7） DOKURITSU GY.（6） TOKYO ELECTR.（5）
NAT INST ADV.（4） SAMSUNG ELEC.（4） PANASONIC CO.（3） VAON LLC（3）
EMPIRE TECHN.（2） HITACHI LTD（2） INFINEON TEC.（2） NEC CORP（2）
POSTECH ACAD.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Graphene device for use in e.g. information technology, has insulator layer, metal layer, graphene layer, optional passivation layer, and optional metal adhesive layer that are arranged together.

LINDAMOOD L, BUSCH J

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Graphene device comprises precursor graphene device and graphene layer in which precursor graphene device comprises insulator layer, metal layer in contact with and covering part of top of insulator layer and carbon layer.

BUSCH J, LINDAMOOD L

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Forming porous graphene-based structure used to make supercapacitor includes directing laser beam onto layer of graphene oxide to reduce a portion of graphene oxide, and laser beam consists of ultrafast femtosecond pulses of laser radiation.

THEKKEKARA L V, GU M, CHEN X

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

Semiconductor device comprises transistor doping region of vertical transistor structure, graphene layer portion adjacent to portion of transistor doping region and transistor wiring structure adjacent to graphene layer portion.

SCHULZE H, RUPP R, RUHL G

Graphene precursor comprises insulator layer, where top portion of insulator layer is electrical insulator, metal layer is in contact with covering portion of insulator layer, carbon layer is in contact with metal layer.

BUSCH J, LINDAMOOD L

Doping graphene layer, comprises depositing graphene layer on carrier substrate, removing carrier substrate from graphene layer in first liquid and applying graphene layer on surface region of target substrate to be coated in second liquid.

Manufacturing method of capacitors, supercapacitors, and electrodes, involves irradiating graphene oxide with beam of light or radiation to form reduced graphene oxide in three-dimensional pattern.

LIN H, JIA B