国家/地区 美国（22）
IPC部 C（22）
IPC大类 C01（22）
IPC小类 C01B（22）
IPC C01B031/04（18） C23C016/26（13） C01B031/02（7）
H01B001/04（7） B82Y030/00（6） C01B032/182（6）
C01B032/18（5） C23C016/44（5） C23C016/46（5）
B82Y040/00（4） C01B032/15（4） H01B013/00（4）
C01B032/186（3） C23C016/01（3） C30B029/02（3）
发明人 HOWE W R（2） HUNT J H（2） LI A W（2）
RUOFF R S（2）
公开年 2015（13） 2014（7） 2016（2）
申请年 2014（22）
专利权人 BOEING CO（2） UNIV TEXAS S.（2）

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Metallic bipolar plate useful in electrochemical cell e.g. low- and high temperature polymer electrolyte fuel cells/electrolyzers, comprises electrically conductive graphene-like coating.

WEISSBECKER V, LEHNERT W, REIMER U, WEI SZLIG BECKER V, REINERT W

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Thermally managed electronic component such as graphene-based heat sinks and thermal conduits, has thermal management coating that comprises layer of aligned carbon nanoparticles which is mounted on graphene coating layer.

LI A W, HUNT J H, HOWE W R

Method for increasing service lifetime of electronic apparatus placed within compartment of vehicle or on exterior of vehicle, involves placing graphene coating layer on environment-facing surface of electronic component of apparatus.

LI A W, HUNT J H, HOWE W R

Forming graphene, useful as e.g. electrical or thermal conductive substrate, comprises placing and heating a substrate within reaction chamber, introducing carbon precursor into chamber, and forming graphene layer on surface of substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Preparation method of reduced graphene oxide (RGO) film, involves reducing graphene oxide thin film using chemical reduction method and pressure-assisted thermal reduction method, respectively, to form reduced graphene oxide film.

KIM S H, JANG J, SHIN K, SHIN K H

Manufacture of graphene film used for e.g. semiconductor, involves arranging substrate, providing metallic catalytic material and reducing gas, raising temperature, providing carbon-containing gas, and generating carbon atoms.

YEN W, CHUEH Y, YEN W C, CHUEH Y L

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H