国家/地区 美国（5） 中国（4） 韩国（4） 世界知识产权组织（4） 日本（3） 欧洲专利局（EPO）（2）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C01B032/186（11）
发明人 SHIN H（4） BYUN K（3） BYUN K E（3）
SHIN H J（3） SHIN K（3） SHIN K W（3）
SONG H（3） SONG H J（3） IFUKU R（2）
KIM C（2） LEE C（2） LEE C S（2）
LEE E（2） MATSUMOTO T（2） RYOTA I（2）
公开年 2020（11）
申请年 2019（6）  2020（4） 
专利权人 SAMSUNG ELEC.（4） TOKYO ELECTR.（2）

Preparing high-conductivity graphene/copper composite wire, comprises electrochemically polishing copper wire, performing coil chemical vapor deposition, and doping using carbon source, reducing gas source and doping source.

LIU Y, YAO S, GUO C, FAN T

Providing hydroxylzing graphene, comprises depositing, predefined quantity of graphene on metal foil of predefined thickness, performing, poly(methyl methacrylate) spin coating of graphene to coated graphene and performing, etching of foil.

SINGLA R, KOTTANTHARAYIL A

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Crystalline graphene used in display device, is obtained by performing thermal treatment involving supplying heat to inorganic substrate, introducing vapor carbon supply, and binding activated carbon to grow crystalline graphene.

SHIN H, CHOI J, WOO Y, YOON S

Detecting abnormal growth of graphene by preparing inspected object having graphene film formed by chemical vapor deposition on substrate, using dark-field optical system to receive light from film and detecting abnormal growth of graphene.

IFUKU R, MATSUMOTO T, FUJIO A, SAITO K, RYOTA I, TAKASHI M, AKIRA F, KOUSAKU S

Forming graphene structure by preparing to-be-processed substrate, pre-processing by supplying gas containing carbon containing gas to to-be-processed substrate, and forming a graphene structure on surface of to-be-processed substrate.

IFUKU R, MATSUMOTO T, SUGIURA M, RYOTA I, TAKASHI M, MASAHITO S

Preparing vertical branched graphene used as catalyst support in e.g. electrocatalytic process involves treating pristine vertical graphene with inert plasma in absence of introduced carbon source to develop vertical branched graphene.

HAN Z, TSOUNIS C, AMAL R

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.

JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C