国家/地区 美国（44） 中国（39） 世界知识产权组织（28） 韩国（27） 日本（19） 欧洲专利局（EPO）（9） 台湾（5） 英国（2）
IPC部 C（88）
IPC大类 C23（88）
IPC小类 C23C（88） C01B（62） B82Y（34）
H01L（22） B32B（20） B01J（14）
C30B（14） H01B（10） B05D（7）
B82B（7） H05K（4） B44C（3）
C25F（3） H01M（3） H05B（3）
IPC C23C016/26（88）
发明人 CHOI J（5） DENG P（5） GUO H（5）
LEI T（5） ZHANG K（5） ZHANG Y（5）
BI H（4） DING G（4） HONG B H（4）
HUANG F（4） XIE X（4） ZHOU M（4）
CHAI Z（3） HAN D（3） HAO Y（3）
公开年 2013（46） 2012（32） 2014（10）
申请年 2012（88）
专利权人 UNIV XIDIAN（8） SAMSUNG ELEC.（5） UNIV SUNGKYU.（5） CHINESE ACAD.（4）
CHINESE ACAD.（4） HANWHA TECHW.（4） SAMSUNG TECH.（4） DOKURITSU GY.（3）
HANWHA AEROS.（3） SHANGHAI INS.（3） UNIV SUNGKYU.（3） CHIU P（2）
CHOI J（2） DENG P（2） FUJITSU LTD（2） GRAPHENE SQU.（2）
GUO H（2） HONG B H（2） KOREA ADV IN.（2） KOREA ADVANC.（2）

Manufacture of surface-treated steel plate involves heating steel plate in chemical vapor deposition chamber at preset temperature by supplying precursor gas comprising carrier gas, cooling, and forming graphene layer.

KIM J K, YOO H J, JUNG Y G, KIM J S

Manufacturing graphene coated steel plate, comprises generating plasma gas, passing gas through water or organic compound to generate functional group, binding functional group on surface of material, and coating graphene on surface.

YOO H J, KIM J K, LEE S K, JUNG Y G, KIM J S

Method for forming graphene film on copper foil, involves placing substrate into reactor, placing solid carbon source into reactor, and heating substrate and source in reactor, where substrate is stacked on top of source in reactor.

LI X, NING H

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Apparatus for manufacturing graphene film used for e.g. transparent electrode, has system for supplying film-forming material gas containing carbon, stage and counter electrodes, and device for applying direct current pulse voltage.

TSUKAHARA N

Graphene transfer method using electromagnetic levitation, comprises annealing graphene thin film in levitation state, and transferring by contacting the graphene thin film and a substrate in levitation state.

JOO I L, WONDONG K, JUNG H K, CHAN Y H, YONG H S

Producing graphene film using fullerene derivative used in e.g. organic light-emitting diode comprises forming carbonized catalyst layer on substrate, laminating fullerene derivative solution on catalyst layer and performing heat treatment.

KIM C S, KANG J W, SEO J H

Preparing graphene thin layer on the surface of metal catalyst involves reacting carbon source and metal catalyst substrate in presence of hydrogen and argon so as to perform carburization reaction.

GAO S, GENG X, GONG Y, LIU L, LONG M, ZHANG X, ZHU C

Preparing graphene-silicon composite material used in lithium ion battery, involves heating substrate in vacuum reaction chamber in protective gas and vacuum condition.

WANG Y, ZHONG H, ZHOU M

Method for forming graphene on substrate used in mechanical system, involves forming solution processed graphene on substrate so as to establish low friction wear surface.

SUMANT A V, ERDEMIR A, CHOI J, BERMAN D