国家/地区 中国（13）
IPC部 C（13） B（4）
IPC大类 C23（13）
IPC小类 C23C（13） C01B（6） C30B（4）
B82Y（3）
IPC C23C016/26（13）
发明人 WANG H（13）
公开年 2018（3） 2012（2） 2015（2）
申请年 2012（2）  2016（2）  2018（2） 
专利权人 SHANGHAI INS.（4） DEHUA LIXIN .（2）

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Preparing one-dimensional single crystal germanium-based graphene plasmon nanostructure in e.g. mid-infrared sensing, comprises sputtering gold nano-film on substrate, and growing high crystallinity graphene shell layer on surface of germanium doped single crystal nano-wire.

WANG H, GU Y, CHANG K, CHEN K

Metal bipolar plate comprises metal substrate, and copper nano layer which is deposited on metal substrate, graphene layer is prepared on copper nanolayer er.

SHANGGUAN P, WANG H, WANG L

Intelligent chemical gas phase reaction deposition device for preparing graphene, where it comprises a pedestal, furnace body, a furnace cover, a controller, an air inlet pipe, air outlet pipe and two support legs.

WANG H

Preparation of graphene-damping composite material by chemical vapor depositing or chemical coating graphene on surface of foam metal skeleton, and injecting polymer using vacuum assisted resin transfer molding or resin dipping method.

ZENG Y, WANG H, YING Z, MA C, CHENG H

Chemical vapor deposition device useful for batch preparation of graphene, comprises a furnace body, a furnace cover, an air inlet pipe, an air outlet pipe and a controller and the furnace cover arranged above the furnace body.

WANG H

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Preparation of metal vapor auxiliary layer rapid growth graphene comprises taking copper-nickel alloy substrate, washing, placing in chemical vapor deposition chamber, positioning, sparging with argon and methane, and growing.

JIANG M, LU G, XIE X, YANG C, WU T, ZHANG X, WANG H

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L

Growing nanostructured single layer graphene film involves selecting copper foil and then annealing selected material with graphene under mixed atmosphere of argon and hydrogen high temperature.

DONG J, HE H, LI K, WANG H, ZENG X