国家/地区 中国（11） 韩国（9） 美国（9） 世界知识产权组织（5）
IPC部 C（18） H（10） B（5）
IPC大类 C23（18）
IPC小类 C23C（18） C01B（9） H01L（8）
B82Y（3） H01B（3） B01J（2）
IPC C23C016/44（18）
发明人 LEE Y（2） PARK S（2）
公开年 2014（18）
申请年 2013（10）  2014（6）  2012（2） 
专利权人 KOREA ADVANC.（2）

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Chemical vapor deposition (CVD) auxiliary device for use in production of high quality and large sized graphene, has metallic foil that is deposited on substrate placed above sealing element provided between cover plates.

AHN C W, KANG I S, SHIN Y H, YOO K

Graphene layer formation method involves subjecting board comprising of stack of layers to high pressure annealing in vacuum atmosphere or inert gas atmosphere.

CHO B J, MUN J H

Mobile multi-station deposition furnace used for depositing graphene, comprises horizontal group set with graphene deposition system, furnace body, and moving body which can switch the graphene deposition system.

JIN H, LIU Z, PENG P, YANG H, ZHANG Z, ZHOU Z

Covering of three-dimensional structure substrate surface with graphene thin film involves cleaning and drying surface of three-dimensional structure substrate and placing in vacuum chamber of chemical vapor deposition device.

SHI H, JIANG H, YANG J, ZHANG Y, WEI D, DU C, LI Z, ZHU P, HUANG D, YU C

Chemical vapor deposition apparatus for preparation of graphene, has slide rail whose ends are set with telescopic cylinders, and slide blocks which are fixedly connected with electric machines respectively.

LIU C, LIAN R

Method for synthesizing graphene layer of e.g. field-effect transistor, involves reducing surface roughness and/or impurities content of support surface, and providing catalytic surface in conditioned environment.

JANSSEN G C A M

Forming graphene involves placing a substrate in processing chamber, adding cleaning gas including hydrogen and nitrogen, and carbon source, initiating microwave plasma, and subjecting the substrate to flow of cleaning gas and carbon source.

BOYD D A, YEH N, YEH N C

Manufacture of surface-treated steel plate involves heating steel plate in chemical vapor deposition chamber at preset temperature by supplying precursor gas comprising carrier gas, cooling, and forming graphene layer.

KIM J K, YOO H J, JUNG Y G, KIM J S