国家/地区 美国（23）
IPC部 C（23）
IPC大类 C23（23）
IPC小类 C23C（23） C01B（17） H01L（14）
H01J（3） B01J（2） B82Y（2）
H01B（2）
IPC C23C016/26（23）
发明人 SHIN H（5） BYUN K（4） LEE C（4）
SHIN H J（4） BYUN K E（3） LEE C S（3）
LEE E（3） MALLICK A B（3） SHIN K（3）
KIM C（2） KIM S（2） LI Y（2）
ROY S S（2） SHEN X（2） SHIN K W（2）
公开年 2021（11） 2022（10） 2023（2）
申请年 2021（23）
专利权人 APPLIED MATE.（5） SAMSUNG ELEC.（5） TOKYO ELECTR.（2） UNIV SINGAPO.（2）
UNIV SUNGKYU.（2）

Method for processing semiconductor, involves material layer formed on portion of liner and metal-containing layer, where layer of material comprises graphene and portion of material layer on liner is removed.

MALLICK A B, SINGHA R S, GHOSH S, ROY S S

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Cathode active material e.g. for lithium secondary battery, comprises e.g. silicon-containing coating layer formed inside pores or on surfaces of carbon-based particles, and carbon coating layer formed on silicon-containing coating layer.

PARK G O, YOO S K, JANGDONGIL, CHUNG J H, JANG D I, ZHENG Z, ZHANG D, YU S, PARK G

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C

System useful for measuring mechanical movements in biological sample, comprises chamber, composite film structure comprising metallic layer and polymer layer, electrical connections and central opening configured to receive biological sample.

MERCOLA M, MOLOKANOVA E, SAVTCHENKO A, LIPOMI D J, ZARETSKI A

Forming graphene film involves depositing carbon source onto substrate within deposition environment comprising vacuum to form graphene film on substrate, where carbon source comprises coal, coal component, or combination.

LAUMB J, TIBBETTS J, AZENKENG A

Method for forming interconnect structure for semiconductor devices, involves forming carbon layer having bonding structure on first metal layer of substrate, and forming second metal layer of substrate electrically connected to first metal layer.

LEE Y, SHIN H, SHIN J, BYUN K, LEE W, AHN S, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE Y S, SHEN X, LI Y