国家/地区 中国（9） 美国（3） 韩国（2）
IPC部 C（11）
IPC大类 C23（11）
IPC小类 C23C（11） B82Y（4） H01L（4）
C01B（2） H01J（2）
IPC C23C016/30（11）
发明人 CHEN Z（2） LI K（2） LI Z（2）
SONG G（2） ZHANG Y（2）
公开年 2017（6） 2016（5）
申请年 2016（11）
专利权人 UNIV QINGDAO.（2）

Method for manufacturing graphene field-effect transistor, involves forming graphene layer on surface of glass substrate, and forming high dielectric constant material layer on surface of graphene layer.

XIAO D

Graphene-based laminate used in e.g. organic light emitting device, transistors, comprises substrate, graphene layer on substrate, and inorganic layer comprising fluorine-containing lithium compound, formed on graphene layer.

PARK C, CHO S, SEO S, SHIN S, PARK C H, CHO S M, SEO S A, SHIN S M

Controlled disulfide preparation method used for graphene in electronic devices involves atmospheric pressure chemical vapor deposition of tungsten disulfide on silicon dioxide/silicon substrate.

GONG Z, HE D, HE J, WANG Y

Preparation of gallium nitride nanostructure array, involves covering monolayer or multilayer graphene film, after cleaning substrate, placing substrate coated with graphene film in chemical vapor deposition tube furnace growth system.

XIU X, CHEN L, CHEN D, LI Y, HUA X, XIE Z, ZHANG R, HAN P, LU H, GU S, SHI Y, ZHENG Y

Growth method of transition metal chalcogenide two-dimensional material-graphene heterostructure used in microelectronic device, involves heating substrate, dissolving carbon source on surface of substrate and heating source materials.

YU G, WU T, XIE X, SHI Z, CHEN J, ZHANG Y, SUI Y, CHEN Z

Method for preparing monolayer graphene encapsulated copper nano particles involves forming single layer graphene encapsulated copper nanoparticles on surface of conductive substrate by chemical vapor deposition method.

HUANG L, ZHANG Y

Preparation of nano silver-containing fluorinated graphene composite material involves transferring formed fluorinated graphene film to deposition chamber, introducing silver reaction gas source, and growing nano silver on graphene film.

WANG Z

Nitrogen-doped graphene silicon dioxide coaxial nanotube field-emission cathode has amorphous silicon dioxide layer coaxially coated on outer wall of graphene tube, to form graphene-based nanocomposite structure.

SONG G, LI Z, LI K

Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.

SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S

Preparation of nitrogen-doped graphene silica coaxial nanotube used as field emission cathode materials involves reacting solid melamine and mixed powder of silicon and silica with graphite substrate impregnated catalyst.

LI K, LI Z, MENG A, ZHANG M, SONG G