国家/地区 日本（19）
IPC部 C（19）
IPC大类 C01（19）
IPC小类 C01B（19）
IPC C23C016/01（19）
发明人 HASEGAWA MASATAKA（2） ISHIHARA MASATOU（2） JOHNSON B Y（2）
KIM J（2） MAZUMDER P（2）
公开年 2017（7） 2015（3） 2016（3） 2013（2）
申请年 2016（5）  2011（3）  2014（3）  2015（3）  2017（2） 
专利权人 CORNING INC（2） NAT INST ADV.（2）

Manufacture of self-supporting graphene film involves horizontally arranging substrate having through hole, dropping gallium droplet, placing substrate in chamber, introducing mixed gas of carrier gas and raw material gas, and heating.

KAWAI K

Manufacture of nitrogen-doped graphene film used as conductive film, involves forming nitrogen-doped graphene film on base by irradiating base with plasma containing hydrocarbon, nitrogen, and oxygen having preset partial pressure.

OKIGAWA YUKI, YAMADA TAKATOSHI, ISHIHARA MASATOU, HASEGAWA MASATAKA

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Continuous method for preparing film comprising graphene, involves advancing metal substrate having graphene-comprising layer out of processing chamber, and separating graphene-comprising layer to form film comprising graphene.

HARUTYUNYAN A, HARUTYUJAN A

Method for fabricating composite film structure for strain sensor system for measuring mechanical movements in biological sample, involves removing metal substrate from graphene and deposited metallic layer to form composite film structure.

ZARETSKI A, LIPOMI D J, SAVTCHENKO A, MOLOKANOVA E, MERCOLA M

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P

Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.

AOTA N, AIDA H

Method for transferring graphene used for e.g. FET to flexible substrate, involves adhering metal substrate on flexible substrate by hot pressing process, removing metal residue using solvent, and drying metal substrate.

TANEMURA M, KALITA G

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K