国家/地区 美国（21） 韩国（14） 中国（13） 世界知识产权组织（11） 欧洲专利局（EPO）（6） 台湾（6） 日本（3）
IPC部 C（39）
IPC大类 C01（39）
IPC小类 C01B（39）
IPC C01B031/04（28） C23C016/26（21） C01B031/02（20）
B82Y040/00（7） B82Y030/00（5） C23C016/44（5）
C01B032/186（4） H01B005/14（4） C23C014/34（3）
C23C014/58（3） C23C016/06（3） C23C016/46（3）
C30B029/02（3） H01B013/00（3） H01G009/042（3）
发明人 SONG J（3） CHOI J（2） FAN T（2）
KOHIKI M（2） LIU Y（2） MIN Y（2）
SAKAGUCHI K（2） SHIN H（2） TONG S（2）
ZHANG L（2）
公开年 2014（39）
申请年 2013（39）
专利权人 SAMSUNG ELEC.（4） NIPPON MININ.（3） NANJING XINY.（2） SAMSUNG TECH.（2）
UNIV SUNGKYU.（2） YANCHENG ZEN.（2）

Graphene useful as an electrode in an electronic device, processed via ion beam treatment method.

KIM S Y, KWON K C

Synthesizing graphene involves immersing flat nickel metal substrate into homogenized precursor solution containing organic solvent and metal salt to obtain finished product.

YOSHIDA M M, MADRID P A, BUSTAMANTE F P, BUSTAMANTE R P

Synthesis of graphene involves coating anti-corrosive material to surface of catalyst metal foil, placing catalyst metal foil coated with anti-corrosive material in chemical vapor deposition chamber and creating vacuum in chamber.

WON D K, KIM N Y

Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.

HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H

Graphene growth method involves sequentially forming conductor layer, insulating layer, carbon layer and semiconductor layer, applying voltage between semiconductor layer and conductive layer, heating, and growing carbon layer.

CHOI J W

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Graphene wiring for semiconductor device comprises substrate, catalyst layer on substrate, graphene layer on catalyst layer, and dopant layer which contains atom or molecule in side surface of graphene layer.

MIYAZAKI H, SAKAI T, KATAGIRI M, YAMAZAKI Y, SAKUMA H, SUZUKI M, SAKUMA N

Copper foil for graphene production and graphene production method used for producing high-quality large-area graphene at low cost.

KOHIKI M, SAKAGUCHI K

Making multiwalled carbon nanotube used in circuit of conductive tip device, by depositing nanoplot made of catalyst material on substrate, and growing nanotube and graphene plane at apex of nanotube by depositing carbon in vapor phase.

LEGAGNEUX P, GANGLOFF L, MAZELLIER J P, ANDRIANIAZY F, COJOCARU C, MAURICE J L, MAZELLIER J, COJOCARU C S, MAURICE J

Copper foil used in manufacture of graphene, has preset surface roughness, and contains copper plating layer and/or copper sputter layer.

KOHIKI MICHIYA, SAKAGUCHI KAZUHIKO, KOHIKI M, SAKAGUCHI K, MICHISHITA N