国家/地区 日本（16）
IPC部 C（16）
IPC大类 C01（16）
IPC小类 C01B（16）
IPC C23C016/455（16）
发明人 MATSUMOTO T（4） IFUKU R（3） NISHIDE D（3）
JOUVRAY A（2） KAGAYA M（2） TEO K B K（2）
公开年 2021（5） 2013（3） 2016（3） 2015（2）
申请年 2014（3）  2015（3）  2021（3）  2013（2）  2020（2） 
专利权人 TOKYO ELECTR.（4） AIXTRON SE（2）

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Electrical contact for forming e.g. connector, is produced using material including layer comprising carbon material which is single graphene layer or graphene laminate on base material comprising metal material having preset resistivity.

MORI K, SHIMIZU T

Production of graphene used in semiconductor applications, involves forming catalyst metal film on substrate, which includes introducing carbons into catalyst metal film, heating catalyst metal film, and cooling catalyst metal film.

NISHIDE D, MATSUMOTO T, IFUKU R

Method for manufacturing graphene, involves forming a carbon containing layer on base layer by atomic-layer-deposition method, and amorphous carbon layer from carbon containing layer, and graphene from amorphous carbon layer.

KOJIMA E, KATAYAMA M, KANO K, OONISHI S, ONISHI S

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R