国家/地区 美国（8） 日本（7） 世界知识产权组织（6） 中国（5） 欧洲专利局（EPO）（5） 韩国（3） 新加坡（2）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C23C016/01（11）
发明人
公开年 2017（11）
申请年 2016（7）  2017（3） 
专利权人

Manufacture of nitrogen-doped graphene film used as conductive film, involves forming nitrogen-doped graphene film on base by irradiating base with plasma containing hydrocarbon, nitrogen, and oxygen having preset partial pressure.

OKIGAWA YUKI, YAMADA TAKATOSHI, ISHIHARA MASATOU, HASEGAWA MASATAKA

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Continuous method for preparing film comprising graphene, involves advancing metal substrate having graphene-comprising layer out of processing chamber, and separating graphene-comprising layer to form film comprising graphene.

HARUTYUNYAN A, HARUTYUJAN A

Chemical vapor deposition process for forming foam-like structure, involves causing decomposition of organometallic compound vapor into metal particles, and precursor gasses into graphene domains and/or hexagonal-boron nitride domains.

LOEBLEIN M, TSANG S H, TEO H T E, TSANG S, ZHANG H

Graphene and micrometric graphite particles manufacturing used in reinforcing material, pigment industry, paints, lubricants, polymer processing and alteration, involves mixing micron sized graphite, and deionized water.

SOLIS A S, CHAVEZ R P, BRITO O M, TORRES L M, MORENO MORALES R L, GUADALUPE DE LA TORRE SAN

Processing method for synthesizing graphene, involves producing flux stream which includes carbon vapor and depositing graphene material from flux stream onto heated substrate at predetermined pressure and temperature values.

KEIDAR M, SHASHURIN A

Method for fabricating composite film structure for strain sensor system for measuring mechanical movements in biological sample, involves removing metal substrate from graphene and deposited metallic layer to form composite film structure.

ZARETSKI A, LIPOMI D J, SAVTCHENKO A, MOLOKANOVA E, MERCOLA M

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P

Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.

AOTA N, AIDA H