国家/地区 世界知识产权组织（21）
IPC部 C（21）
IPC大类 C01（21）
IPC小类 C01B（21）
IPC C23C016/01（21）
发明人 HASEGAWA MASATAKA（2） ISHIHARA MASATOU（2） JOHNSON B Y（2）
KIM J（2） MAZUMDER P（2）
公开年 2017（6） 2015（4） 2012（3） 2016（3） 2021（2）
申请年 2015（4）  2016（4）  2011（3）  2014（3）  2017（3）  2012（2） 
专利权人 CORNING INC（2） HANWHA TECHW.（2） NAT INST ADV.（2）

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Continuously or semi-continuously producing graphene by introducing particles comprising core into stationary deposition chamber and subjecting to plasma enhanced chemical vapor deposition using carbon-containing gas to form solid graphene.

BEUKES J A, HUANG F

Method for manufacturing graphene, involves forming graphene layer on graphene growth substrate, and forming pattern for formation of graphene on graphene growth substrate.

KIM H K, KIM H

Manufacture of nitrogen-doped graphene film used as conductive film, involves forming nitrogen-doped graphene film on base by irradiating base with plasma containing hydrocarbon, nitrogen, and oxygen having preset partial pressure.

OKIGAWA YUKI, YAMADA TAKATOSHI, ISHIHARA MASATOU, HASEGAWA MASATAKA

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Chemical vapor deposition process for forming foam-like structure, involves causing decomposition of organometallic compound vapor into metal particles, and precursor gasses into graphene domains and/or hexagonal-boron nitride domains.

LOEBLEIN M, TSANG S H, TEO H T E, TSANG S, ZHANG H

Method for fabricating composite film structure for strain sensor system for measuring mechanical movements in biological sample, involves removing metal substrate from graphene and deposited metallic layer to form composite film structure.

ZARETSKI A, LIPOMI D J, SAVTCHENKO A, MOLOKANOVA E, MERCOLA M

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K