国家/地区 韩国（13） 美国（13） 中国（5） 日本（5） 台湾（5） 世界知识产权组织（4） 欧洲专利局（EPO）（3）
IPC部 C（20）
IPC大类 C01（20）
IPC小类 C01B（20）
IPC C23C016/513（20）
发明人 BYUN K（3） BYUN K E（3） KIM C（3）
LEE C（3） LEE C S（3） LEE E（3）
SHIN H（3） SHIN H J（3） SHIN K（3）
SHIN K W（3） HONG B H（2） MATSUMOTO T（2）
SONG H（2） SONG H J（2） YEH N（2）
公开年 2020（3） 2010（2） 2013（2） 2014（2） 2017（2） 2021（2） 2022（2）
申请年 2021（3）  2010（2）  2012（2）  2013（2）  2016（2）  2019（2）  2020（2） 
专利权人 CALIFORNIA I.（3） SAMSUNG ELEC.（3） GRAPHENE SQU.（2） TOKYO ELECTR.（2）
UNIV SUNGKYU.（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C

Transistor pathogen virus detector for detection of SARS-COV2 virus, comprises substrate layer, silicon dioxide layer, nanocrystalline diamond layer, graphene oxide layer, fluorinated graphene oxide portions, and linker layer.

KOVI K K, SCHIRMANN E, KHAN A

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Formation of vertical graphene nanostripes used for supercapacitor, involves providing substrate in processing chamber, generating plasma, exposing substrate, and growing graphene nanostripes having preset aspect ratio of length to width.

YEH N, HSU C

Preparing graphene film comprises forming a passivation layer on metal substrate, forming hole in passivation layer, forming a graphene film on a hole exposing the metal substrate and covering passivation layer by graphene film.

TIAN X, HE Y, ZHAO G, LI L, MENG Y, GUO T

Rolling device for preparing graphene film to roll comprises e.g. double-layer quartz pipe, unreeling vacuum chamber, reeling vacuum chamber, plasma generator, tubular furnace and double-layer quartz pipe.

ZHANG J, LUO J, XIONG L, GUO W