国家/地区 欧洲专利局（EPO）（49）
IPC部 C（49）
IPC大类 C01（49）
IPC小类 C01B（49）
IPC C01B031/02（49）
发明人 CHIBA Y（5） CHIBA G（4） VEERASAMY V（4）
VEERASAMY V S（4） CHIBA YOSHIHIRO（3） COJOCARU C（3）
YOSHIHIRO C（3） HONG B H（2） HWANG C（2）
HWANG T（2） JUNG Y（2） JUNG Y G（2）
KIM J（2） LEE J（2） WANG Y（2）
公开年 2012（11） 2011（10） 2013（10） 2015（7） 2010（4） 2014（3）
申请年 2012（13）  2011（10）  2013（6）  2010（5）  2009（4）  2014（4）  2008（2）  2015（2）  2016（2） 
专利权人 JX NIPPON MI.（5） NIPPON MININ.（5） GUARDIAN GLA.（4） GUARDIAN IND（4）
GUARDIAN IND.（4） NIPPON MININ.（4） CENT NAT REC.（3） ECOLE POLYTE.（3）
SAMSUNG ELEC.（3） COMMISSARIAT.（2） COMMISSARIAT.（2） GRAPHENE SQU.（2）
NIPPON MININ.（2） POSCO（2） UNIV SUNGKYU.（2） VEERASAMY V .（2）

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M

Obtaining material deposited on substrate by plasma-assisted chemical vapor deposition used as component of window or touch panel and as component in protection system, involves forming one or more graphene layers.

MUNOZ GOMEZ R, GARCIA HERNANDEZ M D M, GOMEZALEIXANDRE FERNANDEZ C, GOMEZ R, HERNANDEZ M D M, FERNANDEZ C, MUNOZ G R, GARCIA H M D, GOMEZALEIXANDRE F C

Layer stack used to grow graphene or carbon nanotubes that are used e.g. to make integrated circuit or printed circuit board interconnect, comprises substrate, protective layer, and attachment surface disposed between substrate and layer.

SILVA S R, AHMAD M

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Synthesizing reduced graphene oxide on a substrate from seedlac, comprises preparing the seedlac solution in alcohol having specified carbons, dipping the substrate into the solution, and heating the substrate which is a metallic sheet.

SHYAM K C, MANISH K B, TAPAN K R, SUMITESH D, RANJAN K S, YASHABANTA N S, ASHIT K P, VIKAS C S, CHOUDHARY S K, BHADU M K, ROUT T K, DAS S, SAHU R K, SINGHBABU Y N, PRAMANICK A K, SRIVASTAVA V C

Coated article comprises a low temperature component and a graphene coating formed from applying the graphene derivative over the low temperature component.

KALAGA M K, BHATTACHARYYA A, DEVI R M, SCHAEFFER J C, PARAKALA P, PABLA S S, SHEFFIELD J C, PALAKARA P, PABRA S S, CARAGA M K, DEVIE R M

Making multiwalled carbon nanotube used in circuit of conductive tip device, by depositing nanoplot made of catalyst material on substrate, and growing nanotube and graphene plane at apex of nanotube by depositing carbon in vapor phase.

LEGAGNEUX P, GANGLOFF L, MAZELLIER J P, ANDRIANIAZY F, COJOCARU C, MAURICE J L, MAZELLIER J, COJOCARU C S, MAURICE J