国家/地区 日本（17）
IPC部 C（17）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C23C016/26（13） C01B032/182（9） C01B032/15（8）
C01B032/18（7） C01B032/186（6） C01B032/194（6）
C23C016/01（5） C30B029/02（5） C01B031/04（4）
B32B009/00（3） B82Y030/00（3） C23C016/02（3）
C23C016/56（3） H01L021/02（3） H01L029/16（3）
发明人 AIDA H（5） AOTA N（5） BEDWORTH P V（2）
HEISE S E（2） LIU X（2） MATSUMOTO T（2）
SINTON S W（2） SWETT J L（2）
公开年 2017（16）
申请年 2016（17）
专利权人 NAMIKI SEIMI.（5） LOCKHEED MAR.（2） TOKYO ELECTR.（2）

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Manufacture of separator used for polymer electrolyte fuel cell, involves forming graphene film on surface of stainless steel in film-forming apparatus at preset temperature by microwave plasma chemical vapor deposition method.

KUMAGAI M, YOSHINO I, UMENO M, UCHIDA H

Graphene-containing modified latex for forming latex product e.g. sofa, comprises graphene structure and non-carbon non-oxygen non-hydrogen element comprising preset total content of iron, silicon and aluminum elements.

TANG Y, ZHANG J, XU R, LIU D, ZHENG Y, LIU X

Manufacture of gas sensor for nitrogen oxide, involves placing microheater platform substrate having graphene-covered surface, to chemical vapor deposition reactor, injecting inert gas, hydrogen and sulfur source gas, reacting and cooling.

LI T, GUO L, LIANG C, WANG Y

Method for fabricating composite film structure for strain sensor system for measuring mechanical movements in biological sample, involves removing metal substrate from graphene and deposited metallic layer to form composite film structure.

ZARETSKI A, LIPOMI D J, SAVTCHENKO A, MOLOKANOVA E, MERCOLA M

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P

Manufacture of graphene for fabrication of electronic device, involves adsorbing molecule having six-membered ring structure onto surface of substrate, and irradiating surface using beam of molecules containing carbon atoms.

MATSUMOTO T

Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.

AOTA N, AIDA H