国家/地区 日本（75）
IPC部 C（75）
IPC大类 C01（75）
IPC小类 C01B（75）
IPC C01B031/04（75）
发明人 CHIBA Y（5） CHIBA G（4） HONG B H（4）
MATSUMOTO T（4） VEERASAMY V（4） VEERASAMY V S（4）
BAE S K（3） CHIBA YOSHIHIRO（3） FAN F Y（3）
FAN S（3） HONG B（3） JIANG K（3）
LEE Y（3） LIN X（3） LIN X Y（3）
公开年 2011（14） 2012（14） 2015（14） 2013（12） 2016（6） 2017（5） 2014（4） 2010（3） 2009（2）
申请年 2012（13）  2014（12）  2010（11）  2011（11）  2015（9）  2013（8）  2009（5）  2016（4） 
专利权人 JX NIPPON MI.（6） NIPPON MININ.（6） SAMSUNG ELEC.（5） GUARDIAN GLA.（4）
GUARDIAN IND（4） GUARDIAN IND.（4） NIPPON MININ.（4） TOKYO ELECTR.（4）
UNIV SUNGKYU.（4） GRAPHENE SQU.（3） HON HAI PREC.（3） HONGFUJIN PR.（3）
UNIV SUNGKYU.（3） UNIV SUNGKYU.（3） UNIV TSINGHU.（3） AIXTRON SE（2）
BASF SE（2） COMMISSARIAT.（2） COMMISSARIAT.（2） CORNING INC（2）

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z

Manufacture of gas sensor for nitrogen oxide, involves placing microheater platform substrate having graphene-covered surface, to chemical vapor deposition reactor, injecting inert gas, hydrogen and sulfur source gas, reacting and cooling.

LI T, GUO L, LIANG C, WANG Y

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Production of graphene used in semiconductor applications, involves forming catalyst metal film on substrate, which includes introducing carbons into catalyst metal film, heating catalyst metal film, and cooling catalyst metal film.

NISHIDE D, MATSUMOTO T, IFUKU R

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Manufacture of structure-controllable three-dimensional graphene porous material involves preparing porous metal structure, heating, cooling, performing sand blasting, growing graphene film, washing and drying.

SHI Y, YAN C, ZHU W

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Method for manufacturing graphene, involves forming a carbon containing layer on base layer by atomic-layer-deposition method, and amorphous carbon layer from carbon containing layer, and graphene from amorphous carbon layer.

KOJIMA E, KATAYAMA M, KANO K, OONISHI S, ONISHI S

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S