国家/地区 中国（6） 日本（2） 韩国（2） 台湾（2） 美国（2） 世界知识产权组织（2）
IPC部 C（11）
IPC大类 C23（11）
IPC小类 C23C（11）
IPC C30B025/18（6） C23C016/02（4） C23C016/26（4）
C30B029/02（3） H01L021/02（3） C01B032/186（2）
C30B025/16（2） C30B028/14（2） C30B029/40（2）
发明人 FENG H（2） ZHANG J（2）
公开年 2022（11）
申请年 2021（11）
专利权人

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Substrate for forming semiconductor device, comprises graphene layer arranged on silicon surface of silicon carbide crystal substrate, epitaxial growth layer, and graphene layer arranged on silicon surface of epitaxial growth layer.

NORIYUKI M, TAKUJI M, MITSURU M, TAKAYASU O

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Preparing two-dimensional material heterojunction device, comprises dissociating two-dimensional material, embedding electrode to substrate by spin coating, transferring dissociated two-dimensional material and forming multi-layer heterojunction structure.

LI P, YANG Q, LIN J

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparation of ultrathin beta-radiation source for micro-components, involves using polymethyl methacrylate/graphene film and platinum sheet, and depositing beta-radiation source on graphene using solution of e.g. beta-radiation source.

ZHANG J, LI C, WANG X, XU P, FENG H, CHEN Z, YANG Y, WU W, ZHOU C, LUO T

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Preparing one-dimensional single crystal germanium-based graphene plasmon nanostructure in e.g. mid-infrared sensing, comprises sputtering gold nano-film on substrate, and growing high crystallinity graphene shell layer on surface of germanium doped single crystal nano-wire.

WANG H, GU Y, CHANG K, CHEN K