国家/地区 韩国（31）
IPC部 C（31）
IPC大类 C23（31）
IPC小类 C30B（31）
IPC C30B029/02（20） C23C016/26（19） C01B031/04（16）
C30B025/18（15） C01B031/02（13） B82Y030/00（11）
B82Y040/00（11） C01B032/186（11） C23C016/02（11）
C01B032/194（7） H01L021/02（6） C23C016/34（5）
B32B009/00（4） B32B009/04（4） C23C014/34（4）
发明人 VEERASAMY V（3） VEERASAMY V S（3） CHIBA Y（2）
CHIBA YOSHIHIRO（2） HONG B H（2） KIM J（2）
PARK H（2） YOON J H（2）
公开年 2011（5） 2014（4） 2013（3） 2015（3） 2021（3） 2022（3） 2009（2） 2016（2） 2017（2）
申请年 2016（5）  2013（4）  2009（3）  2012（3）  2014（3）  2020（3）  2008（2）  2011（2）  2021（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3） JX NIPPON MI.（2）
NIPPON MININ.（2） SAMSUNG TECH.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Producing hexagonal boron nitride thin film useful for photoelectric device, light-emitting and light-receiving device, comprises forming hexagonal boron nitride thin film on graphene oxide layer by supplying e.g. boron-containing precursor.

KO K B, YOO B, HAN M, TRANVEITCUONG, HONG C

Manufacture of vanadium dioxide nanostructure involves heating quartz tube containing vanadium dioxide nanopowder and graphene layer-based substrate, depositing vanadium dioxide vapor on graphene layer, and growing nanostructure.

KIM K C, OH S A, CHAE Y E, YOON J H, KIM J I

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J