国家/地区 世界知识产权组织（43）
IPC部 C（43）
IPC大类 C23（43）
IPC小类 C30B（43）
IPC C30B029/02（29） C23C016/26（28） C01B031/04（20）
C30B025/18（18） C01B032/186（17） B82Y040/00（16）
C01B031/02（16） C23C016/02（15） B82Y030/00（14）
C30B025/02（9） H01L021/02（9） C23C016/56（8）
C01B032/194（7） C01B032/182（6） C23C016/34（6）
发明人 DING G（3） VEERASAMY V（3） VEERASAMY V S（3）
XIE X（3） CASTRO A H（2） CHIBA Y（2）
CHIBA YOSHIHIRO（2） COJOCARU C（2） DIXON S（2）
GUINEY I（2） JIANG M（2） KIM J（2）
LIU X（2） PARK H（2） TANG S（2）
公开年 2012（6） 2013（6） 2021（6） 2011（4） 2015（4） 2016（4） 2022（4） 2014（3） 2017（2）
申请年 2013（6）  2011（5）  2012（5）  2016（5）  2020（5）  2021（4）  2009（3）  2014（3）  2015（3）  2022（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3） SHANGHAI INS.（3）
UNIV SINGAPO.（3） CENT NAT REC.（2） CHINESE ACAD.（2） DING G（2）
ECOLE POLYTE.（2） JX NIPPON MI.（2） NIPPON MININ.（2） PARAGRAF LTD（2）
UNIV XIDIAN（2） XIE X（2） ZHANG K（2）

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Substrate for forming semiconductor device, comprises graphene layer arranged on silicon surface of silicon carbide crystal substrate, epitaxial growth layer, and graphene layer arranged on silicon surface of epitaxial growth layer.

NORIYUKI M, TAKUJI M, MITSURU M, TAKAYASU O

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B