国家/地区 中国（22） 美国（15） 韩国（13） 世界知识产权组织（9） 日本（8） 欧洲专利局（EPO）（5） 德国（3） 台湾（3）
IPC部 C（33） H（17） B（6）
IPC大类 C23（33）
IPC小类 C23C（33） H01L（14） C01B（9）
B82Y（4） B01J（3） H01J（3）
C01G（2） C09K（2） C30B（2）
H01M（2）
IPC C23C016/455（33）
发明人 AHN W（2） AHN W S（2） IFUKU R（2）
KIM H（2） KIM H S（2） LIU B（2）
MATSUMOTO T（2） WAN G（2） WANG G（2）
XIA Y（2） ZHUO E（2）
公开年 2021（33）
申请年 2020（17）  2021（15） 
专利权人 UNIV SUNGKYU.（3） APPLIED MATE.（2） BEIHAI HUIKE.（2） HKC CO LTD（2）
SAMSUNG ELEC.（2） TOKYO ELECTR.（2） UNIV HAINAN（2）

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Producing octahedral transition metal dichalcogenides involves forming transition metal layer on substrate and injecting chalcogenide-containing gas onto the substrate together with plasma treatment.

VINIT K, KIM H U, LEE J, SEOK H, KIM T, KIM T S, SEOK H H, WOO K H, CANADEVINIT

Growing two-dimensional transition metal chalcogenide film for manufacturing e.g. diode, involves placing patterned metal layer on substrate surface, supplying chalcogen precursor and transition metal precursor to chamber, and evacuating.

LEE E, AHN W, KIM H, LEE H, LEE H S, KIM H S, AHN W S, HA L

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Chemical vapor deposition device for preparing graphene film, has vacuum monitoring unit for controlling and detecting vacuum degree of reaction unit, and carbon source feeding unit comprising atomizer and vaporizer.

GAO X, SHAN J, LIU B, ZHENG K, GU W

Porous silicon-carbon composite material for lithium ion battery, comprises core-shell structure, where inner core is composite of porous carbon, cerium dioxide and graphene component, and shell is doped with oxide compound selected from phosphorus oxide, arsenic oxide and selenium oxide.

CAO J

Vapor deposition process for selectively depositing material on a first surface of substrate relative to a second organic surface for semiconductor device, comprises contacting the substrate cyclically with a vapor phase hydrophobic first reactant and a vapor phase second reactant.

TOIS E, HAUKKA S P, NISKANEN A, MATERO R H, SUEMORI H, FAERM E

Method for production of atomic bilayer nanotape, involves oxidizing portion of monolayer to provide oxidized portion, and removing oxidized portion to provide atomic layer nanotape comprising transition metal dichalcogenide material.

HARUTYUNYAN A R, LI X

Two-dimensional material forming apparatus comprises substrate moving unit, and two-dimensional material forming unit for forming two-dimensional material by spraying carbon gas on substrate moved by substrate moving unit.

SHIN U C

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z