国家/地区 中国（7） 美国（4） 韩国（2） 世界知识产权组织（2）
IPC部 C（14）
IPC大类 C23（14）
IPC小类 C23C（14） H01L（6） C01B（4）
B01J（2）
IPC C23C016/455（14）
发明人 LIU T（2）
公开年 2023（14）
申请年 2022（11）  2021（2） 
专利权人 SAMSUNG ELEC.（2）

Plasma deposition of material onto two dimensional layer of first substrate, involves depositing protective layer directly onto dimensional layer by pulsed plasma deposition process, and depositing second layer onto protective layer by second plasma deposition process.

RIAZIMEHR S, KNOOPS H, SUNDARAM R

Depositing gate dielectric on two-dimensional material involves depositing seed layer over atomically smooth surface of two dimensional material, evaporating predefined thickness of seed layer from atomically smooth surface, and performing atomic layer deposition.

SHRIVASTAVA M, KHANEJA M, MEERSHA A

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Depositing nanoscale-thin film in preselected area on substrate for area-selective atomic layer deposition based on electron beam patterning of chemical functional groups, involves depositing layer of functionalizing molecule onto or adjacent to first surface of substrate.

YOUNG M J, MASCHMANN M R

Preparation of cobalt-based composite material used in lithium battery negative electrode material, involves performing discharge plasma sintering treatment to cobalt antimonide and graphitized carbon powder, ball-milling, and depositing non-metal semiconductor material layer on obtained material.

XU Y, WANG X, LIU T

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Gas pipeline for transmitting process gas from gas supply source to reaction chamber of semiconductor device, has first section and third section that are respectively provided with first heating unit and second heating unit capable of independently controlling temperature.

YIN N

Depositing polystyrene microspheres by selecting substrate for polystyrene microsphere deposition, placing substrate on substrate in reaction chamber of atomic layer deposition instrument, vaporizing diethyl zinc, ultrasonically dispersing and soaking substrate in polystyrene microsphere suspension.

GENG Z, PU J, CAO Q, DU J, XU X, ZHANG H, GUAN C

Substrate processing apparatus for manufacturing semiconductor device, comprises substrate support to support multiple substrates such that substrates are on substrate support, chamber sidewall surrounding side surface of substrate support, and upper plate having plate portions on substrate support.

OH S, AN S, LEE J, JEONG G, JUNG K O, LEE J H, AHN S J, OH S R

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J