国家/地区 中国（17）
IPC部 C（17）
IPC大类 C23（17）
IPC小类 C23C（17） C01B（3） B82Y（2）
G01N（2） H01L（2）
IPC C23C016/02（17）
发明人 ZHANG H（4） CHEN Z（3） DENG R（3）
GE X（3） SUI Y（3） WANG Y（3）
YU G（3） ZHANG Y（3） LI H（2）
公开年 2017（17）
申请年 2017（8）  2016（7）  2015（2） 
专利权人 SHANGHAI INS.（3）

Method for manufacturing graphene field-effect transistor, involves forming graphene layer on surface of glass substrate, and forming high dielectric constant material layer on surface of graphene layer.

XIAO D

Improvement of conductivity of atmospheric pressure chemical vapor deposited graphene film, involves surface cleaning copper foil, high temperature heat-treating treated copper foil, heating, and introducing methane.

LIU Q, SU D, PENG J

Chemical vapor deposition process for forming foam-like structure, involves causing decomposition of organometallic compound vapor into metal particles, and precursor gasses into graphene domains and/or hexagonal-boron nitride domains.

LOEBLEIN M, TSANG S H, TEO H T E, TSANG S, ZHANG H

Preparing vertical graphene/boron doped diamond sensing electrode used for detection of biological molecules, involves using electronic assisted hot filament chemical vapor deposition device for preparing boron-doped diamond film.

LI M, LI X, LI H, LI C, SUN D, YANG B

Insulating substrate for patterning and directly growing graphene, involves using graphene, which is directly grown on insulating substrate which has graphene growth catalysis by chemical vapor deposition, and mechanism of direct growth.

SUN J, XU C, DONG Y, XIE Y, XUN M, PAN G, WANG Q

Graphene noble metal preparation for composite pipes involves chemical vapor deposition of noble metal nanoparticles onto graphene surface to form noble metal composite coating.

MI R, FU Z, WANG C, HUANG W, ZHONG M, LIU M, LI H, YUAN L, YANG X, ZHAO H

Preparing copper substrate based on cleaning process for manufacturing chemical vapor deposition graphene, involves providing copper substrate for preparing graphene, and then treating copper substrate in aerobic environment.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Preparation of graphene on silicon metal-free catalyst comprises taking silicon dioxide sputtering substrate, magnetron sputtering hexagonal boron nitride, chemical vapor depositing, and growing graphene on boron nitride film.

ZHANG L

Passivation of graphene coating on zirconium alloy surface involves immersing zirconium alloy in nitric acid/hydrofluoric acid mixture, drying, depositing silicon carbide passivated particles and passivating surface defects of graphene.

ZHANG H, HOU Y, GUO J, WEI L, WANG Y, LI Z, ZHOU J, SHI M, MA Q, HUANG Z