国家/地区 日本（145）
IPC部 C（145）
IPC大类 C23（145）
IPC小类 C23C（145） C01B（133） H01L（57）
B82Y（44） B32B（32） C30B（24）
H01B（21） B01J（17） B05D（13）
H01M（12） H01J（10） H05H（8）
B82B（7） C03C（6） C23F（5）
IPC C23C016/26（145）
发明人 MATSUMOTO T（18） IFUKU R（14） WADA M（9）
AIDA H（5） AOTA N（5） FAN F Y（5）
FAN S（5） JIANG K（5） KABUKI N（5）
LIN X（5） UMENO M（5） XIAO L（5）
HONG B H（4） LIN X Y（4） SUGIURA M（4）
公开年 2013（24） 2017（19） 2021（18） 2012（17） 2015（15） 2011（12） 2016（8） 2022（7） 2014（6） 2020（5） 2018（3） 2023（3） 2009（2） 2010（2）
申请年 2012（19）  2011（15）  2010（14）  2015（13）  2016（13）  2013（12）  2014（11）  2020（10）  2019（8）  2021（7）  2022（7）  2017（6）  2018（3）  2008（2）  2009（2） 
专利权人 TOKYO ELECTR.（19） SAMSUNG ELEC.（6） DOKURITSU GY.（5） HON HAI PREC.（5）
HONGFUJIN PR.（5） NAMIKI SEIMI.（5） NAT INST ADV.（5） UNIV TSINGHU.（5）
GRAPHENE SQU.（4） PANASONIC CO.（4） TOSHIBA KK（4） UNIV CALIFOR.（4）
UNIV SUNGKYU.（4） AIXTRON SE（3） CORNING INC（3） FUJI ELECTRI.（3）
FUJITSU LTD（3） SHANGHAI INS.（3） ULVAC INC（3） UNIV NAGOYA（3）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T