国家/地区 日本（58）
IPC部 B（58）
IPC大类 C01（58）
IPC小类 C01B（58）
IPC C01B031/04（58）
发明人 CHIBA G（4） CHIBA Y（4） VEERASAMY V（4）
VEERASAMY V S（4） BAE S K（3） FAN F Y（3）
FAN S（3） JIANG K（3） LIN X（3）
LIN X Y（3） XIAO L（3） YOSHIHIRO C（3）
BAE S（2） CHIBA YOSHIHIRO（2） CHOE P（2）
公开年 2012（13） 2011（11） 2013（11） 2015（10） 2016（5） 2010（3） 2009（2） 2014（2）
申请年 2012（12）  2011（11）  2014（9）  2010（8）  2013（6）  2009（5）  2015（4）  2016（2） 
专利权人 JX NIPPON MI.（5） NIPPON MININ.（5） SAMSUNG ELEC.（5） GUARDIAN GLA.（4）
GUARDIAN IND（4） GUARDIAN IND.（4） NIPPON MININ.（4） HON HAI PREC.（3）
HONGFUJIN PR.（3） UNIV SUNGKYU.（3） UNIV TSINGHU.（3） BASF SE（2）
COMMISSARIAT.（2） COMMISSARIAT.（2） GRAPHENE SQU.（2） JAPAN SCI TE.（2）
MAX PLANCK G.（2） NIPPON MININ.（2） POSCO（2） TOKYO ELECTR.（2）

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Manufacture of structure-controllable three-dimensional graphene porous material involves preparing porous metal structure, heating, cooling, performing sand blasting, growing graphene film, washing and drying.

SHI Y, YAN C, ZHU W

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Method for increasing service lifetime of electronic apparatus placed within compartment of vehicle or on exterior of vehicle, involves placing graphene coating layer on environment-facing surface of electronic component of apparatus.

LI A W, HUNT J H, HOWE W R

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H