国家/地区 中国（18） 美国（8） 日本（5） 世界知识产权组织（4） 韩国（3） 欧洲专利局（EPO）（2）
IPC部 C（28）
IPC大类 C30（28）
IPC小类 C30B（28）
IPC C30B029/02（28）
发明人 XU X（6） AIDA H（4） AOTA N（4）
CHEN X（3） LIU K（3） ZHANG Z（3）
ZHAO X（3） CHENG X（2） LIU J（2）
MA Q（2） SUN L（2） WANG E（2）
YANG Z（2） YOON S（2） YU D（2）
公开年 2017（15） 2016（11）
申请年 2016（28）
专利权人 NAMIKI SEIMI.（4） UNIV PEKING（3） UNIV SHANDON.（3） SHANDONG BEN.（2）

Apparatus for producing two-dimensional (2D) material e.g., graphene comprises carrier substrate having 2D surface, 2D sheet for growing 2D material, furnace which forms a tubular volume around the carrier substrate and sheet, and heater.

SHERRILL J V, ERICKSON G

Synthesis of graphene used in e.g. electronic applications, involves reacting drawn catalytic substrate with precursor gas containing hydrocarbon gas and hydrogen gas to form continuous single crystal graphene.

LIST F A, STEHLE Y Y, VLASSIOUK I V, SMIRNOV S N

Use of graphene as protective material for high-iron suspension wire, and preventing corrosion and oxidation of high-iron suspension wire.

SHI Y, BI H

Preparation of dendritic monocrystalline graphene for e.g. sensor, involves cleaning copper foil substrate with acetic acid and acetone, pre-annealing and pre-oxidizing substrate, chemical vapor depositing and cooling substrate.

TU R, ZHANGCHI T, ZHANG S, ZHANG L

Preparing graphene on 6H-4H-silicon carbide metal composite substrate involves polishing 6H-4H-silicon carbide carbon surface, cleaning and cutting, placing in chemical vapor deposition furnace chamber and filling with argon.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Synthesizing reduced nuclei density monocrystalline graphene comprises electrochemical polishing rectangular thin copper sheet in phosphoric acid solution, annealing, introducing methane and hydrogen, and growing graphene.

SUN Z, LIU B

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Growing of large-sized monocrystalline graphene on silicon carbide substrate used for microelectronic device, involves polishing silicon carbide substrate, introducing e.g. argon, placing probe on substrate and growing graphene on substrate.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J