国家/地区 韩国（29）
IPC部 C（29）
IPC大类 C01（29）
IPC小类 C01B（29）
IPC G03F001/62（16） C01B032/194（10） G03F007/20（9）
C01B031/02（8） C01B031/04（8） C01B032/184（8）
G03F001/22（7） C01B032/186（6） C01B032/182（5）
G03F001/64（5） G03F007/00（5） B01J019/08（4）
G03F007/004（4） G03F007/16（4） H01L021/027（4）
发明人 KIM H Y（5） MI K H（5） KIMHYUNGKEUN（4）
JOJINWOO（3） KIM H（3） KIM H K（3）
KIM H M（3） KIM K S（3） KIM S G（3）
KIM S K（3） LEE G H（3） LEE S Y（3）
CHO J W（2） CHO S J（2） CHOI J H（2）
公开年 2022（9） 2021（4） 2017（3） 2012（2） 2013（2） 2014（2） 2018（2） 2023（2）
申请年 2021（6）  2022（5）  2016（4）  2020（4）  2012（3）  2013（2） 
专利权人 KOREA ELECTR.（6） SAMSUNG ELEC.（4） FINE SEMITEC.（2） HANWHA TECHW.（2）
SAMSUNG TECH.（2） SHINETSU CHE.（2） SHINETSU CHE.（2）

Pellicle used for reticle for extreme-UV exposure, comprises pellicle film through which extreme-UV rays transmit and support frame for supporting pellicle film, where pellicle film comprises multilayer thin film structure.

KIM Y H, KIMYONGHWAN

Pellicle used for exposure to extreme UV rays, comprises substrate having opening formed in central portion, etch stop layer formed on substrate to cover opening, and nanoporous graphene layer in which nanopores are formed on graphene layer, provided on etch stop layer.

KIMHYUNGKEUN, MI K H, KIM S K, JOJINWOO, KIM H Y

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Manufacturing graphene thin film for pellicle material using ozone gas useful in semiconductor devices comprises forming graphene on the upper surface of substrate, exposing graphene layer to ozone, and heat-treating and etching.

LEE G H, KWON Y, WOOK Y B, MOON S I, MOON J, KIM K S, LEE S M

Pellicle film used for extreme UV lithography, comprises boron nitride nanostructure layer.

CHOI J H, CHO S J, YU L, KIM C, LEE S Y, SEO K W, KIM K S, MOON S Y, KIMCHUNG, SEO K

Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises etching transition metal thin film to form three-dimensional pattern and inserting into chemical vapor deposition chamber to synthesize graphene.

KIM J, WIMALANANDA M D S, LEE J M

Producing pellicle structure useful for protecting photomask in semiconductor integrated circuits, comprises e.g. forming lower protective layer on entire surface of substrate, and forming amorphous thin film on lower protective layer.

KIM K B

Producing nanosheet, used to produce reduced graphene oxide sheet, comprises e.g. spin-coating sheet with graphene oxide solution, setting area, and contacting basic material to patterning surface of patterned poly dimethylsiloxane stamp.

LEE J H