国家/地区 韩国（11）
IPC部 B（11）
IPC大类 B01（11）
IPC小类 B01J（11）
IPC C23C016/56（11）
发明人 BEDWORTH P V（2） CHOI J（2） CHOI J Y（2）
HEISE S E（2） IFUKU R（2） MATSUMOTO T（2）
SINTON S W（2） SWETT J L（2）
公开年 2016（2） 2017（2） 2021（2）
申请年 2010（2）  2015（2）  2016（2）  2020（2） 
专利权人 LOCKHEED MAR.（2） SAMSUNG ELEC.（2） TOKYO ELECTR.（2） UNIV SUNGKYU.（2）

Manufacturing transition metal dichalcogenide-graphene heterojunction electrode comprises transferring graphene to electrode, depositing transition metal layer on graphene-transferred electrode and injecting plasma-treated sulfur gas.

KIM T S, SEOK H H, LEE I, WOO K H

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M

Graphene forming apparatus has gas supply unit which is placed in side of laser generator for spraying sealed gas on amorphous carbon layer.

KI H S, LEE K H

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Method for improving graphene property involves irradiating laser beam on graphene grown on substrate, and heat treating.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J