国家/地区 日本（12） 美国（8） 世界知识产权组织（7） 中国（4） 欧洲专利局（EPO）（4） 韩国（3） 新加坡（3）
IPC部 B（12）
IPC大类 B32（12） C01（12） H01（8）
C23（4） B82（3） C08（2）
IPC小类 B32B（12）
IPC C01B032/15（12）
发明人 FUKIDOME H（3） MIHASHI F（3） MITSUHASHI F（3）
SUEMITSU M（3） TATENO Y（3） UENO M（3）
OKADA M（2）
公开年 2017（5） 2015（3） 2012（2）
申请年 2014（3）  2015（2）  2016（2）  2017（2） 
专利权人 SUMITOMO ELE.（3） UNIV TOHOKU（3）

Stacked body for use in electronic device, has exposed surface which is being main surface opposite to substrate, and regions each including graphene layers and having circumcircle with predetermined diameter range.

OKADA M, MITSUHASHI F, UENO M, TATENO Y, SUEMITSU M, FUKIDOME H, MIHASHI F

Stacked body used in electronic device such as transistor ,has graphene film arranged on first main surface and having atomic arrangement oriented in relation to atomic arrangement of silicon carbide forming substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, SUEMITSU M, FUKIDOME H, MIHASHI F

Manufacture of graphene substrate involves laminating layer comprising catalytic metal, laminating layer on surface side of above layer, heat treating obtained layer, and cooling to form graphene between substrate and layer.

NARUTSUKA S, YAMADA J

Laminated body for use in FET, has graphene film fixed on main surface of substrate portion, where film comprises atomic arrangement and exposed surface of graphene film is main surface of graphene film opposite to substrate portion.

MITSUHASHI F, ISHIZUKA T, UENO M, TSUKUDA Y, TATENO Y, SUEMITSU M, FUKIDOME H, NAGASAWA H, MIHASHI F

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Use of reduced graphene oxide laminate membrane as barrier material in which reduced graphene oxide is formed from reduction of graphene oxide with reducing agent.

RAVEENDRANNAIR R, SU Y, GEIM A, RAVEENDRAN N R

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Manufacture of graphene film used for e.g. next-generation transistor, involves transferring graphene film with supporting film to graphene film on another substrate, and transferring laminated graphene films to another substrate.

HAYASHI K

Composite component used for electronic apparatus e.g. display device, electrode for lithium-ion battery, biosensor and electrochemical sensor, has layers of graphene perpendicularly or incliningly arranged on layer containing polymer.

LEE Y, LEE S, SOOJEONG L, YOUNGKWAN L