国家/地区 美国（206）
IPC部 B（206）
IPC大类 B82（206）
IPC小类 B82Y（206）
IPC B82Y040/00（168） B82Y030/00（163） C23C016/26（121）
C01B031/04（105） C01B031/02（94） C01B032/186（47）
C23C016/02（37） H01B001/04（37） H01L021/02（36）
B32B009/00（31） C23C016/56（26） B82B003/00（25）
C01B032/194（24） C23C016/44（23） H01L029/16（22）
发明人 CHOI J（11） FAN S（10） HONG B H（10）
JIANG K（10） LIN X（9） AHN J（8）
SHIN H（6） WOO Y（6） BAE S K（5）
CHOI J Y（5） FAN F Y（5） KIM H K（5）
LEE S（5） NAGEL C J（5） NAM W（5）
公开年 2013（44） 2012（40） 2011（26） 2014（18） 2015（16） 2021（15） 2018（10） 2017（9） 2016（7） 2010（4） 2019（4） 2020（4） 2022（4） 2023（3） 2009（2）
申请年 2012（47）  2011（39）  2013（27）  2010（15）  2014（13）  2017（10）  2015（8）  2019（8）  2020（8）  2021（8）  2016（7）  2009（6）  2022（5）  2018（3）  2008（2） 
专利权人 SAMSUNG ELEC.（17） HON HAI PREC.（10） HONGFUJIN PR.（10） UNIV SUNGKYU.（10）
UNIV TSINGHU.（10） HANWHA AEROS.（8） HANWHA TECHW.（8） INT BUSINESS.（7）
UNIV SUNGKYU.（7） EMPIRE TECHN.（6） SAMSUNG TECH.（6） UNIV CALIFOR.（6）
UNIV SUNGKYU.（6） GRAPHENE SQU.（5） GUARDIAN IND.（5） NPS CORP（5）
QUANTUM ELEM.（5） GUARDIAN GLA.（4） GUARDIAN IND（4） JX NIPPON MI.（4）

Transparent electrode for solar cell, comprises transparent substrate and composite layer disposed on transparent substrate, where composite layer comprises graphene layer and set of nanoparticles, where nanoparticles are embedded in graphene layer and extend through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Preparing solar cell involves heating substrate deposited with nanoparticles, forming composite layer with graphene layer, cooling, disposing transparent substrate having quartz, glass and polymers such as polymethylmethacrylate, polystyrene, fabricating electrode, forming cathode and electrolyte.

ELSAYED K A M, MAAROUF A A

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Reactor assembly comprises gas inlet and one or more gas outlets and reactor chamber containing nanoporous carbon material arranged within cup and covered with cap, where first porous frit defining floor of reactor chamber arranged within cup and covered with cap, and second porous frit.

BRODEUR C L, NAGEL C J

Making solar cell involves depositing multiple nanoparticles on surface of chemical vapor deposition substrate, heating substrate and nanoparticles at sub-atmospheric pressure, and contacting gaseous mixture comprising methane and hydrogen with nanoparticles.

ELSAYED K A M, MAAROUF A A

Active material used in negative electrode for lithium secondary battery, comprises pores having preset size, and silicon-based compound having preset ratio of peak intensity in region having specific wavelength in Raman spectrum.

PARK G O, YOO S K, CHUNG J H, ZHENG Z, YU S, PARK G

Loaded body for fuel cell, has sputtering source, pulse power supply, inert gas supply unit and nanocluster growth cell, where when nanoclusters are produced in vapor phase using nanocluster generating device, and nanoclusters are supported on carrier, each carriers loaded with nanoclusters.

NAKAJIMA A, TSUNOYAMA H, UNO M, GUNJI H, ANDO T, TSUKAMOTO K, TONA M, HIRATA N

Reactor assembly comprises gas inlet, gas outlets, reactor chamber, porous frits having porosity and comprising nanoporous carbon material, reactor head space, reactor assembly lamps, and computer processing unit.

NAGEL C J, BRODEUR C L

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S