国家/地区 中国（16） 美国（4） 日本（3） 世界知识产权组织（3）
IPC部 C（17） B（3） H（2）
IPC大类 C01（17） C23（5） C30（3）
B82（2） H01（2）
IPC小类 C01B（17）
IPC C01B032/186（17）
发明人 DI Z（7） XIE X（7） WANG H（6）
XUE Z（6） ZHANG M（5） DAI J（4）
WANG G（4） ZHENG X（4） WANG X（3）
XIE H（3） CHEN L（2） DING G（2）
HE L（2） JIA P（2） JIANG M（2）
公开年 2017（4） 2015（3） 2014（2） 2020（2） 2022（2）
申请年 2015（6）  2021（3）  2013（2）  2019（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（17）

Preparing patterned graphene, comprises forming accommodating passage in silicon carbide base, providing catalyst and insulating substrate, placing catalyst in accommodating passage, and placing sandwich structure in heating device.

GAO B, ZHANG C, GU J, WU T, ZHU H

Preparation of hexagonal boron nitride surface torsion double-graphite alkene involves introducing reaction gas and catalytic gas into chemical vapor growth chamber at second preset temperature.

WANG W, XIAO X, JIANG C, WANG H

Method for realizing dry transfer graphene continuous film, involves pressing PVA film on heterjunction at first preset temperature by using PVC film, and selecting second preset temperature as hardening temperature of PVA film.

XUE Z, GUO W, DI Z

Preparing silicon based substrate heterogeneous integrated graphene, comprises e.g. providing silicon based substrate, then forming dielectric layer on surface of the silicon based substrate, depositing graphene film and etching.

OU X, YI A, LIN J, ZHANG S, YU Q, XIE X

Co-production method of low-layer graphene and hydrogen involves adding metal-containing catalyst to reaction vessel, heating, passing hydrocarbon gas into molten metal-containing catalyst, collecting solid product and gas and separating.

YU Q, SHI Z, XIE X

Preparation of doped graphene involves providing substrate, forming protective layer on graphene layer, injecting doping element into graphene layer from upper surface of protective layer using ion implantation process and activating.

ZHANG M, GAO M, HAN X, JIA P, XUE Z, DI Z

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Preparation of continuous single layer graphene on insulating substrate by providing insulating substrate, depositing germanium film on insulating substrate, using germanium film as catalyst and growing graphene at high temperature.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparation of patterned graphene involves providing insulating substrate, depositing germanium film on insulating substrate, etching desired pattern in germanium film, forming patterned germanium film, and continuously evaporating.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Non-adhesion graphene preparing metal foil layer stacking method, involves stacking layers of metal foil, separating metal foil, and utilizing chemical vapor deposition in each surface of metal foil stacked structure to prepare graphene.

ZHANG Y, YU G, SUI Y, CHEN Z, DENG R, GE X, LIANG Y, HU S