国家/地区 韩国（43） 美国（34） 日本（28） 世界知识产权组织（26） 中国（20） 欧洲专利局（EPO）（10） 台湾（8） 德国（6） 法国（3） 英国（3） 澳大利亚（2） 加拿大（2） 西班牙（2） 印度（2） 新加坡（2）
IPC部 C（75）
IPC大类 C01（75）
IPC小类 C01B（75）
IPC C01B031/02（75）
发明人 CHIBA Y（3） JUNG M（3） KIM K H（3）
MARTENS R I（3） SEO B（3） BACSA R（2）
BYUNG J C（2） CHIBA G（2） CHOI I S（2）
CHOI J Y（2） HONG B H（2） HUNLEY D P（2）
KADONO K（2） KOBAYASHI T（2） LEE K J（2）
公开年 2013（75）
申请年 2012（42）  2011（21）  2013（12） 
专利权人 KOREA ADVANC.（5） UNIV SUNGKYU.（5） JX NIPPON MI.（4） CENT NAT REC.（3）
LG ELECTRONI.（3） NIPPON MININ.（3） SAMSUNG ELEC.（3） SAMSUNG TECH.（3）
SRC CORP（3） TE CONNECTIV.（3） TYCO ELECTRO.（3） UNIV SUNGKYU.（3）
CNRS CENT NA.（2） HANWHA AEROS.（2） HANWHA TECHW.（2） INST NAT POL.（2）
INT BUSINESS.（2） KOREA ADV IN.（2） MAAROUF A（2） MARTYNA G J（2）

Chemical vapor deposition system used for manufacturing graphene, comprises cooling portion which cools grapheme, graphene combiner which synthesizes graphene by chemical vapor deposition, and material supply portion.

NA D H

MManufacturing three-dimensional structure of graphene useful in flexible display, comprises preparing mold, forming graphene layer on mold, forming support structure for covering first and second sides on graphene layer, and removing mold.

LEE S, BYUN N, JUNG M, LEE D, SEO B

Manufacture of graphene film used for e.g. gas barrier film, involves depositing graphene film on base material surface maintained at specified temperature and pressure by microwave surface wave plasma chemical vapor deposition method.

TSUGAWA K, YAMADA T, HASEGAWA M

Device e.g. graphene nanoribbons useful in high speed and low power electronics comprises substrate, and first graphene nanoribbon overlying the substrate, where the first graphene nanoribbon has specific width.

ZHANG Y

Graphene film, useful in a LCD element and electronic paper display device, comprises self-assembled monolayer formed on substrate, and graphene oxide thin films formed on self-assembled monolayer.

HWANG J O, KIM S O

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Device, useful for producing graphene for transistor, comprises chamber with space for processing substrate, substrate support, gas supply, light source, focusing unit, and unit for transferring formed graphene layer on substrate.

BYOUNG W J, BYUNG J C, SEOK W J

Graphene patterning method involves adhering two different substrates, coating graphene oxide on upper substrate and then forming patterned bonding layer on graphene oxide-coated substrate.

CHANG S T, KIM N H

Formation of graphene film used for e.g. electronic device, involves performing reduction process by heating metal film in atmosphere containing hydrogen gas, carrying out graphene film growth process, and cooling.

YOSHII S, NOZAWA K, MATSUKAWA N

Method for manufacturing electrical conductor, involves depositing boundary cappings on defects of graphene layer to inhibit corrosion of the substrate layer at defects and depositing boundary capping material on substrate layer.

LIU Z, ZHENG M, MARTENS R I, MARTENS R