国家/地区 中国（11） 美国（10） 世界知识产权组织（10） 欧洲专利局（EPO）（8） 日本（7） 韩国（7） 印度（2） 墨西哥（2） 波兰（2） 俄罗斯（2） 台湾（2）
IPC部 C（14）
IPC大类 C01（14）
IPC小类 C01B（14）
IPC C01B032/188（14）
发明人 VEERASAMY V（2） VEERASAMY V S（2）
公开年 2011（3） 2021（3） 2015（2）
申请年 2020（4）  2009（2）  2011（2）  2017（2） 
专利权人 GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Composition used in flexible near infrared photodetector, comprises nanowire.

IYER S, NALAMATI S R K, LI J

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L

Preparing wafer-level single crystal copper foil comprises cutting edges of polycrystalline copper foil to obtain polycrystalline copper foil with notches, and annealing in hydrogen atmosphere to obtain single crystal copper foil.

LI Y, LI L, CHEN Z, SU C, TIAN B

Preparation of silicon carbide graphene substrate epitaxial material by growing silicon carbide base layer, growing silicon carbide-graphene layer and preparing special device to process silicon carbide-graphene composite layer.

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Manufacture of graphene precursor-containing silicon carbide substrate involves forming graphene precursor by heating silicon carbide substrate, and forming structure including molecular layers having carbon dangling bonds.

KANEKO T, KUTSUMA Y, DOJIMA D

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A