国家/地区 中国（14）
IPC部 C（14）
IPC大类 C01（14） C04（14） C23（4）
C03（3） B82（2） H01（2）
IPC小类 C01B（14）
IPC C04B041/50（14）
发明人 GUO H（4） LEI T（4） ZHANG Y（4）
CHENG H（2） WU J（2） ZHANG C（2）
公开年 2013（5） 2012（2） 2015（2）
申请年 2013（5）  2012（3）  2014（2） 
专利权人 UNIV XIDIAN（4） UNIV SHANGHA.（2）

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Gas detection device based on silicon carbide graphene material, has matrix contact metal layer plated on graphene layer of composite silicon carbide graphene material, and zinc oxide particle layer coated on metal layer.

INVENTOR U

Device for preparing graphene oxide graphite electrode, has cover and closed cavity connected by hinge, closed cavity whose bottom end is provided with through groove and dust collecting box is fitted to bottom end of through groove.

WU J

Preparing graphene film composite comprises e.g. preparing graphene derivative solution, coating graphene derivative solution on selected substrate surface to form substrate composite and passing through microwave heating zone.

ZHANG J

Producing soft-hard template based graphene comprises reacting cetyltrimethylammonium bromide, tetramethoxysilane and oil soluble organic small molecule pyrene in acidic system, then molding and calcining.

JIANG X, LIU R, WU D, SU Y, YANG Y, QIU C, WU J, PAN Y

Preparing graphene thin film involves supplying substrate and then applying substrate on surface of carbon source layer in controllable manner to obtain uniform thickness layer.

KANG X, ZENG S, ZUO Q

Coating surfaces of different substrates with covalently-bonded graphenes comprises thermal expansion and floating of graphene, graphene oxide or graphite materials in the presence of silicon- or cyano-containing polymers.

LEE L J, HUANG W, YU J, LEE L

Manufacture of graphene powder for e.g. photoelectric device, involves decomposing organic substances by fast heating in oxyhydrogen flame, and reconfiguring produced active carbon atoms on insulating substrate or catalyst substrate.

HUANG F, LIN T

Preparation of wide graphene silicon-based substrate grating used as copper film annealing graphene involves chemical vapor deposition, carbonization, growing silicon carbide hetero-epitaxial film, depositing copper film and annealing.

GUO H, LEI T, LIU J, ZHANG Y, HU Y

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C