国家/地区 美国（12）
IPC部 C（12）
IPC大类 C01（12）
IPC小类 C01B（12）
IPC C23C014/58（12）
发明人 CHIU S（2） CHIU S M（2） CHUNG C（2）
CHUNG C J（2） HU C（2） HU C L（2）
HUANG C（2） HUANG C H（2） HUANG J（2）
QIU S（2） WU B（2） WU B H（2）
ZHONG C（2）
公开年 2010（2） 2013（2） 2014（2） 2015（2） 2016（2）
申请年 2013（3）  2016（2） 
专利权人 FOUND METAL .（2） H HT CO LTD（2） METAL IND RE.（2）

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Method of manufacturing coating layer structure applied to machine element, involves locating continuous graphene structure layer between metal substrate and coating layer to act as buffer structure between substrate and coating layer.

HUANG Y, HU C, HU Q, HUANG Y C, HU C L

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Method for producing large-area reduced graphene oxide sheet on substrate, involves subjecting substrate and graphene oxide layer to reduction process simultaneously, and forming reduced graphene oxide layer after reduction process.

HU C L, HU C

Producing patterned graphene comprises irradiating focal point on metal substrate surface with laser beam in the presence of carbon dioxide and moving the beam relative to surface so that focal point is displaced along the pattern.

ZHAO C, DONG J, DONG X, QIAN X

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.

HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H

Graphene composite electrode material preparation method, involves providing glass substrate, forming metal thin film on glass substrate, and patterning metal thin film to form circuit image.

WANG Y

Making strip shaped graphene layer used in semiconductor devices e.g. sensor, involves providing carbon nanotube structure comprising film on substrate surface, implanting carbon ions into substrate, and annealing substrate to obtain layer.

LIN X, JIANG K, FAN S

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A