国家/地区 日本（8） 美国（8） 韩国（7） 中国（5） 世界知识产权组织（4）
IPC部 C（15） H（7） B（6）
IPC大类 C01（15） C23（15） B82（6）
H01（6） B01（2） B05（2）
C03（2）
IPC小类 C01B（15）
IPC C23C016/26（15）
发明人 CHUNG H（2） CHUNG H J（2） HEO J（2）
HEO J S（2） HUH J（2） HUH J S（2）
JUNG H（2） JUNG H J（2） KANG S（2）
KANG S R（2） SEO D（2） SEO S（2）
SEO S A（2） WOO Y（2） WOO Y S（2）
公开年 2011（15）
申请年 2010（15）
专利权人 SAMSUNG ELEC.（3） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Graphene sheet manufacturing method, involves preparing and connecting base member with catalyst metal layer, fixing graphene layer with base member, and removing catalyst metal layer from separated graphene layer.

WON D K, CHO S M, RYU J C

Formation of graphene used for semiconductor device, solar cell and flat panel display device, involves introducing carbon-type gas to surface vicinity of base material and heat processing surface of base material.

NAKASHIMA S, KATO S, UEHARA T, NAKANISHI K, MATSUMOTO M, FUKIDOME H, SUEMITSU M

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Manufacture of graphene film for photoelectron engineering device, involves preparing monocrystal substrate, providing monocrystalline catalyst layer, processing, heating gaseous carbon source and cooling.

FUJITA D, XU M S, JO A

Manufacture of graphene film involves supplying carbon containing gas to substrate which installed seed graphene crystal and forming graphene film on substrate by chemical vapor deposition process.

FUJII K, SHIMIZU A

Graphene manufacturing device for forming graphene thin film on silicon wafer, has substrate lifting unit for ascending and descending substrate, and gas supply part for supplying carbon source and purging gas to vacuum chamber.

CHOI K J, WOONG C S

Depositing a graphene film involves supplying a gaseous-phase graphene source to a substrate, adsorbing the graphene source to form an adsorbed layer on the substrate, and activating the adsorbed layer by heating the adsorbed layer.

AHN S, KANG S Y

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Manufacture of graphene film material involves growing graphene film on copper substrate, providing on silicon substrate, dissolving copper substrate in ferric nitrate solution, depositing graphene film, drying, cleaning and cooling.

ZHANG X, JIANG J, YU W, ZHANG L