国家/地区 韩国（19）
IPC部 B（19）
IPC大类 C01（19） C23（19） B82（11）
H01（11） B01（10） B32（8）
B05（2） H05（2）
IPC小类 C01B（19）
IPC C23C016/26（19）
发明人 HONG B H（5） CHOI I S（3） CHOI J（3）
HONG B（3） KIM H（3） LEE K J（3）
AHN J（2） AHN J H（2） CHOE P（2）
CHOI B（2） CHOI B L（2） CHOI I（2）
CHOI J Y（2） CHOI S Y（2） HWANG T（2）
公开年 2012（19）
申请年 2012（9）  2011（8）  2010（2） 
专利权人 HANWHA TECHW.（5） KOREA ADV IN.（5） SAMSUNG TECH.（5） SAMSUNG ELEC.（4）
UNIV SUNGKYU.（3） GRAPHENE SQU.（2） HANWHA AEROS.（2） KOREA ADVANC.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Apparatus for manufacturing graphene film, has heater that is provided to heat domain of catalyst substrate which is arranged to contact gas gushing out from gas jet unit.

YOON J, HYEOK Y J, YOON J H

Formation of graphene wiring involves alternately laminating metal catalytic layer and graphene layer on substrate.

JUNG J W, LEE W J

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I