国家/地区 台湾（32）
IPC部 C（32）
IPC大类 C01（32）
IPC小类 C01B（32）
IPC C23C016/26（32）
发明人 FAN F Y（4） FAN S（4） GUINEY I（4）
JIANG K（4） LIN X（4） THOMAS S（4）
XIAO L（4） LIN X Y（3） DIXON S（2）
GLASS H（2） LIN C（2） MUELLEN K（2）
NARKEVICIUTE I（2） SACHDEV H（2） SCHWAB M G（2）
公开年 2021（7） 2022（6） 2012（4） 2016（4） 2015（3） 2011（2） 2013（2）
申请年 2021（8）  2011（5）  2020（4）  2014（3）  2015（3）  2013（2）  2016（2） 
专利权人 APPLIED MATE.（5） HON HAI PREC.（4） HONGFUJIN PR.（4） PARAGRAF LTD（4）
UNIV TSINGHU.（4） BASF SE（2） CALIFORNIA I.（2） CORNING INC（2）
IND TECHNOLO.（2） LAM RES CORP（2） MAX PLANCK G.（2）

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Porous silicon-carbon composite used for negative electrode active material for lithium secondary battery, comprises silicon particles, magnesium fluoride, and carbon.

LIM J C, LEE J, JEON Y M, LIM S W, PARK J G, LEE H S, LIM H H, NAM S J, LEE E, LIM J, HYUN L J, IMSUNGWOO, HEE L, JIN N, PARK S

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K