国家/地区 韩国（30）
IPC部 C（30）
IPC大类 C01（30）
IPC小类 C01B（30）
IPC C23C016/455（30）
发明人 MATSUMOTO T（4） IFUKU R（3） KIM Y K（3）
LEE S J（3） NISHIDE D（3） PARK S（3）
HAN S H（2） JOUVRAY A（2） KAGAYA M（2）
KIM H K（2） LEE C（2） LEE C S（2）
SEO J W（2） SONG Y（2） TEO K B K（2）
公开年 2017（8） 2021（5） 2015（4） 2016（4） 2012（2） 2013（2） 2014（2）
申请年 2016（7）  2014（4）  2015（4）  2017（3）  2021（3）  2012（2）  2020（2） 
专利权人 SAMSUNG ELEC.（4） TOKYO ELECTR.（4） AIXTRON SE（2） KOREA ELECTR.（2）
SAMSUNG TECH.（2） UNIV SUNGKYU.（2）

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Two-dimensional material forming apparatus comprises substrate moving unit, and two-dimensional material forming unit for forming two-dimensional material by spraying carbon gas on substrate moved by substrate moving unit.

SHIN U C

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Method for directly synthesizing graphene on surface of target object, involves forming non-metal layer on support substrate, disposing target object in space above support substrate, and injecting carbon precursor to form graphene.

SONG Y, UDDIN M S, PARK J, PARKJAEHYUN

Large area graphene growth apparatus has second heater that is installed at lower portion of chamber, and second heater driving unit is configured to adjust position of second heater with respect to chamber.

GI C K, CHEOL K G

Graphene composite electrode used for manufacturing electrochromic device, consists of graphene layer, atomic layer formed on graphene layer, and transparent conductive layer formed on atomic layer.

KIM H K, KIM Y K, HAN S H, LEE S J, SEO J W

Manufacture of electrochromic device used as e.g. smart window, involves growing graphene on substrate, performing atomic layer deposition process on graphene layer, forming atomic layer, and forming conductive layer on atomic layer.

KIM H K, KIM Y K, HAN S H, LEE S J, SEO J W