国家/地区 韩国（13）
IPC部 C（13）
IPC大类 C01（13）
IPC小类 C01B（13）
IPC C23C016/513（13）
发明人 BYUN K（3） BYUN K E（3） KIM C（3）
LEE C（3） LEE C S（3） LEE E（3）
SHIN H（3） SHIN H J（3） SHIN K（3）
SHIN K W（3） HONG B H（2） MATSUMOTO T（2）
SONG H（2） SONG H J（2）
公开年 2010（2） 2013（2） 2014（2） 2020（2）
申请年 2010（2）  2012（2）  2013（2）  2020（2） 
专利权人 SAMSUNG ELEC.（3） GRAPHENE SQU.（2） TOKYO ELECTR.（2） UNIV SUNGKYU.（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Manufacturing method of non-catalytic substrate growth graphene, involves performing pre-heating process for preheating a substrate before additionally performing plasma-enhanced chemical vapor deposition.

LEE Y T

Manufacturing graphene coated steel plate, comprises generating plasma gas, passing gas through water or organic compound to generate functional group, binding functional group on surface of material, and coating graphene on surface.

YOO H J, KIM J K, LEE S K, JUNG Y G, KIM J S

Manufacture of graphene sheet involves growing thin film containing metal catalyst on substrate containing carbon source by providing reaction gas, reacting graphene sheet and heating supporter on graphene growth.

HUI H B, SU K G

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T

Manufacture of graphene used for e.g. graphene sheet, involves reacting reaction gas including carbon source, and heat on substrate.

AHN J, BAE S K, HONG B H, JUNG M H, KIM H R, KIM S J, AHN J H, BAE S