国家/地区 美国（14） 世界知识产权组织（12） 韩国（10） 中国（9） 日本（9） 欧洲专利局（EPO）（7）
IPC部 C（22）
IPC大类 C01（22） C30（22） B82（8）
H01（8） B32（5） B01（3）
C23（3） D01（2）
IPC小类 C01B（22）
IPC C30B001/02（22）
发明人 JANG B Z（4） XIONG W（3） ZHAMU A（3）
MANCEVSKI V（2）
公开年 2012（3） 2014（3） 2021（3） 2013（2） 2015（2） 2018（2） 2020（2）
申请年 2020（6）  2012（4）  2014（2）  2017（2） 
专利权人 NANOTEK INST.（4） JANG B Z（2） UNIVERSAL MA.（2） XIONG W（2）
ZHAMU A（2）

Device used to conversion of feedstock to resultant material having higher degree of crystallinity than feedstock comprises constraining reservoir, electrodes, compression system, alternating current power source and electrical controller.

MANCEVSKI V, LUONG D X, COOKSEY T, WILLIAMS J, MAZOR E, ZHANG Z, JAY B

Substrate device useful for surface enhanced Raman scattering, comprises substrate with support surface, and graphene layer connected to support surface of substrate.

TAPASZTA LEVENTE, DOBRIK GERGELY, NEMESINCZE PATER, VANCSA PATER

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial, is embedded with seed crystals containing seeds oriented in preset direction or seed crystals single crystallized in preset direction.

PARK H B, ROH J S, JANG J K, CHANG J K

Preparing wafer-level single crystal copper foil comprises cutting edges of polycrystalline copper foil to obtain polycrystalline copper foil with notches, and annealing in hydrogen atmosphere to obtain single crystal copper foil.

LI Y, LI L, CHEN Z, SU C, TIAN B

Preparing ferromagnetic film epitaxial single-layer graphene involves forming a ferromagnetic film with regular hexagonal lattice properties on an insulating substrate, and matching the insulating substrate properties.

PAN M, QIU W, HU J, LI P, PENG J, HU Y, ZHANG Q

Production of graphene/semiconductor nanowire hybrid material composition for electrode, involves preparing catalyst metal-coated mixture using semiconductor particles made of e.g. tin and/or indium, and growing semiconductor nanowires.

JANG B Z

Heat dissipation system used in e.g. power tool and microelectronic or telecommunication device, comprises heat spreader comprising unitary graphene monolith comprising closely packed and chemically bonded parallel graphene oxide planes.

ZHAMU A, XIONG W, JANG B Z

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Production of unitary graphene layer or graphene single crystal for use as heat spreader involves preparing graphene oxide gel having graphene oxide molecules dispersed in fluid medium, removing fluid medium, and heat-treating graphene.

ZHAMU A, XIONG W, JANG B Z