国家/地区 中国（7） 世界知识产权组织（6） 韩国（5） 美国（5） 欧洲专利局（EPO）（4） 日本（4） 加拿大（3）
IPC部 C（12）
IPC大类 C01（12） C30（12） H01（4）
C23（3） B01（2） B05（2）
IPC小类 C01B（12）
IPC C30B029/02（12）
发明人 MANCEVSKI V（2） VLADIMIR M（2）
公开年 2021（12）
申请年 2020（8）  2021（3） 
专利权人 UNIV HANYANG.（2） UNIVERSAL MA.（2）

Method for reducing nucleation density of graphene, involves passing gas into quartz tube to normal pressure after vacuuming and turning OFF heating and gas supply of tube furnace and cooling tube furnace to room temperature after growth of graphene is completed.

YUAN L

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Chemical vapor deposition (CVD) graphene production device comprises movably connected support base, multiple graphene growth substrates and top cover, where support base is ring-shaped closed structure.

ZHANG B, LI J, WANG X, XU Z

Fabrication of graphene used for electrode of e.g. sandwich-style capacitor, involves providing patterned substrate, depositing graphene oxide on patterned substrate, and reducing graphene oxide to graphene.

CHAICHI A, GARTIA M R

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial, is embedded with seed crystals containing seeds oriented in preset direction or seed crystals single crystallized in preset direction.

PARK H B, ROH J S, JANG J K, CHANG J K

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Growing single crystal graphene on a metal substrate comprises placing metal substrate and alkali metal halide in a reactor, inducing chemical vapor deposition of graphene on the metal substrate by heating.

BAKWONYIL, KIM S H

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L